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參數資料
| 型號： | SMBJ3V3/52 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 封裝： | ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN |
| 文件頁數： | 2/4頁 |
| 文件大?。?/td> | 101K |
| 代理商： | SMBJ3V3/52 |
www.vishay.com
2
Document Number 88940
08-Sep-06
Vishay General Semiconductor
SMBJ3V3
Note:
(1) Thermal resistance from junction to lead - Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal
(2) Thermal resistance from junction to ambient - Mounted on the recommended P.C.B. pad layout
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Typical thermal resistance, junction to lead (1)
RθJL
20
°C/W
Typical thermal resistance, junction to ambient (2)
RθJA
100
ORDERING INFORMATION
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SMBJ3V3-E3/52
0.096
52
750
7" Diameter Plastic Tape & Reel
SMBJ3V-E3/5B
0.096
5B
3200
13" Diameter Plastic Tape & Reel
Figure 1. Pulse Waveform
Figure 2. Peak Pulse Power Rating Curve
0
50
100
150
td
0
1.0
2.0
3.0
4.0
tr = 8
sec.
tr = 10
sec.
IPPM
-
P
eak
P
u
lse
C
u
rrent,
%
I
RSM
t - Time (ms)
td = 1000 s
td = 20 s
Peak Value
IPPM
Half Value -
IPPM
IPP
2
Tj = 25 °C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50 % of IPPM
10
1
0.1
0.01
0.1
1
10
P
PPM
-
P
e
ak
P
u
lse
P
o
w
er
(k
W
)
td - Pulse Width (ms)
Figure 3. Relative Variation of Leakage Current vs.
Junction Temperature
Figure 4. Clamping Voltage vs. Peak Pulse Current
(Tj initial = 25 °C)
0.1
1
10
0
25
50
75
100
125
150
175
T j - Junction T emperature (°C)
IR
(T
j)/
IR
(T
j=
2
5
°
C
)
4
6
8
10
0.1
1
10
100
1000
Ipp (A)
Cl
a
m
p
in
g
V
o
lta
g
e
(
V
)
10/1000 s
8/20 s
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SMBJ3V3-E3/52 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 3.3V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBJ3V3-E3/55 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 3.3V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBJ3V3-E3/5B | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 3.3V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBJ3V3HE3/52 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 3.3V Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBJ3V3HE3/5B | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 3.3V Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
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