參數(shù)資料
型號: SMAJ530-E3/2G
廠商: VISHAY SEMICONDUCTORS
元件分類: TVS二極管 - 瞬態(tài)電壓抑制
英文描述: 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC
封裝: ROHS COMPLIANT, PLASTIC, SMA, 2 PIN
文件頁數(shù): 3/4頁
文件大?。?/td> 90K
代理商: SMAJ530-E3/2G
Document Number 88391
14-Sep-06
www.vishay.com
3
SMAJ530 & SMAJ550
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 3. Pulse Waveform
0
50
100
150
td
0
1.0
2.0
3.0
4.0
IPPM
-
P
e
ak
P
u
lse
C
u
rrent,
%
I
RSM
t - Time (ms)
tr = 10 sec
Peak Value
IPPM
Half Value -
IPPM
IPP
2
10/1000 sec Waveform
as defined by R.E.A.
Tj = 25 °C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50 % of IPPM
0.157 (3.99)
0.177 (4.50)
0.006 (0.152)
0.012 (0.305)
0.030 (0.76)
0.060 (1.52)
0.008 (0.203)
0.194 (4.93)
0.208 (5.28)
0.100 (2.54)
0.110 (2.79)
0.078 (1.98)
0.090 (2.29)
0.049 (1.25)
0.065 (1.65)
Cathode Band
0 (0)
DO-214AC (SMA)
0.074 MAX.
(1.88 MAX.)
0.208
(5.28) REF
0.066 MIN.
(1.68 MIN.)
0.060 MIN.
(1.52 MIN.)
Mounting Pad Layout
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