參數(shù)資料
型號: SM320F2812HFGM
廠商: TEXAS INSTRUMENTS INC
元件分類: 數(shù)字信號處理
英文描述: 16-BIT, 150 MHz, OTHER DSP, CQFP172
封裝: NCTB, CERAMIC, QFP-172
文件頁數(shù): 138/147頁
文件大?。?/td> 1721K
代理商: SM320F2812HFGM
Electrical Specifications
90
December 2004
SGUS053
6.9
Timing Parameter Symbology
Timing parameter symbols used are created in accordance with JEDEC Standard 100. To shorten the
symbols, some of the pin names and other related terminology have been abbreviated as follows:
Lowercase subscripts and their meanings:
Letters and symbols and their meanings:
a
access time
H
High
c
cycle time (period)
L
Low
d
delay time
V
Valid
f
fall time
X
Unknown, changing, or don’t care level
h
hold time
Z
High impedance
r
rise time
su
setup time
t
transition time
v
valid time
w
pulse duration (width)
6.10
General Notes on Timing Parameters
All output signals from the 28x devices (including XCLKOUT) are derived from an internal clock such that all
output transitions for a given half-cycle occur with a minimum of skewing relative to each other.
The signal combinations shown in the following timing diagrams may not necessarily represent actual cycles.
For actual cycle examples, see the appropriate cycle description section of this document.
6.11
Test Load Circuit
This test load circuit is used to measure all switching characteristics provided in this document.
Transmission Line
4.0 pF
1.85 pF
Z0 = 50
(see note)
Tester Pin Electronics
Data Sheet Timing Reference Point
Output
Under
Test
NOTE: The data sheet provides timing at the device pin. For output timing analysis, the tester pin electronics and its transmission line effects
must be taken into account. A transmission line with a delay of 2 ns or longer can be used to produce the desired transmission line effect.
The transmission line is intended as a load only. It is not necessary to add or subtract the transmission line delay (2 ns or longer) from
the data sheet timing.
42
3.5 nH
Device Pin
(see note)
Input requirements in this data sheet are tested with an input slew rate of < 4 Volts per nanosecond (4 V/ns) at the device pin.
Figure 66. 3.3-V Test Load Circuit
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