參數(shù)資料
型號: SM12AT1G
廠商: ON SEMICONDUCTOR
元件分類: TVS二極管 - 瞬態(tài)電壓抑制
英文描述: 450 W, BIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, TO-236
封裝: LEAD FREE, PLASTIC, CASE 318-08, SOT-23, 3 PIN
文件頁數(shù): 2/5頁
文件大小: 61K
代理商: SM12AT1G
SM12AT1
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation @ 20
ms @ TL ≤ 25°C (Note 1)
Ppk
450
W
IEC 6100042 (ESD)
Air
Contact
±15
±8.0
kV
IEC 6100044 (EFT)
50
A
IEC 6100045 (Lightning)
12
A
Total Power Dissipation on FR5 Board (Note 2) @ TA = 25°C
Derate above 25
°C
Thermal Resistance JunctiontoAmbient
°PD°
RqJA
225
1.8
556
°mW°
mW/
°C
°C/W
Total Power Dissipation on Alumina Substrate (Note 3) @ TA = 25°C
Derate above 25
°C
Thermal Resistance JunctiontoAmbient
°PD°
RqJA
300
2.4
417
°mW
mW/
°C
°C/W
Junction and Storage Temperature Range
TJ, Tstg
55 to +150
°C
Lead Solder Temperature Maximum (10 Second Duration)
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Nonrepetitive current pulse per Figure 3
2. FR5 = 1.0 x 0.75 x 0.62 in.
3. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina
*Other voltages may be available upon request
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
Symbol
Parameter
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
Working Peak Reverse Voltage
IR
Maximum Reverse Leakage Current @ VRWM
VBR
Breakdown Voltage @ IT
IT
Test Current
QVBR
Maximum Temperature Coefficient of VBR
IF
Forward Current
VF
Forward Voltage @ IF
ZZT
Maximum Zener Impedance @ IZT
IZK
Reverse Current
ZZK
Maximum Zener Impedance @ IZK
UniDirectional TVS
IPP
IF
V
I
IR
IT
VRWM
VC VBR
VF
ELECTRICAL CHARACTERISTICS
Device
Marking
VRWM
IR @ VRWM
VBR, Breakdown Voltage
IT
VC @
IPP = 1 A
(Note 4)
Max IPP
(Note 4)
Typical
Capacitance
(Volts)
(pF)
(Volts)
(
mA)
Min
Max
mA
(Volts)
(Amps)
Pin 1 to 3
@ 0 V
SM12AT1
12N
12
1.0
13.3
15.75
1.0
19
18
120
4. 8
× 20 ms pulse waveform per Figure 3
相關(guān)PDF資料
PDF描述
SM12C.TC 300 W, BIDIRECTIONAL, SILICON, TVS DIODE
SM12C 300 W, BIDIRECTIONAL, SILICON, TVS DIODE
SM36CT 300 W, BIDIRECTIONAL, SILICON, TVS DIODE
SM24C 300 W, BIDIRECTIONAL, SILICON, TVS DIODE
SM15KPA220CA 15000 W, BIDIRECTIONAL, SILICON, TVS DIODE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SM12B-CPTK-1A-TB 制造商:JST Manufacturing 功能描述:12 Position 2mm Pitch Side Entry Wire to Board Board Mount Header
SM12B-GHS-TB (LF)(SN) 制造商:JST Manufacturing 功能描述:HEADER 1.25MM 12WAY SMT 90DEG
SM12B-GHS-TB(LF)(SN) 制造商:JST Manufacturing 功能描述:GH Series 12 Circuits Single Row SMT Rigt Angle 1.25 mm Housing 制造商:JST Manufacturing 功能描述:GH 1.25mm header side entry 12 way
SM12B-GHS-TB(LF)(SN)- 制造商:JST Manufacturing 功能描述:CONN HEADER GH SIDE 12POS 1.25MM
SM12B-NSHSS-TB (LF)(SN) 制造商:JST Manufacturing 功能描述:CONN HEADER 12 POS R/A SMD 1.0MM