參數(shù)資料
型號(hào): SLUA110
廠商: Texas Instruments, Inc.
英文描述: PRACTICAL CONSIDERATIONS IN CURRENT MODE POWER SUPPLIES
中文描述: 實(shí)用的思考模式電源電流
文件頁(yè)數(shù): 4/19頁(yè)
文件大小: 787K
代理商: SLUA110
APPLICATION NOTE
U-111
Figure 8. Voltage & Current Waveforms at Gate
In a practical application, the transistors and other circuit
parameters, fortunately, are less than ideal. The results
above are unlikely to happen in most designs, however
they will occur at a reduced magnitude if not prevented.
Limiting the peak current through the IC is accomplished
by placing a resistor between the totem-pole output and
the gate of the MOSFET. The value is determined by divid-
ing the totem-pole collector voltage
current rating of the IC’s totem-pole. Without this resistor,
the peak current is limited only by the dV/dT rate of the
totem-pole and the FET gate capacitance.
For this example, a collector supply voltage of 10 volts is
used, with an estimated totem-pole saturation voltage of
approximately 2 volts. Limiting the peak gate current to 1.5
amps max requires a resistor of six ohms, and the nearest
standard value of 6.2 ohms was used. Locating the resistor
in series with the collector to the auxiliary voltage source
will only limit the turn-on current. Therefore it must be
placed between the PWM and gate to limit both turn-on
and turn-off currents.
Actual circuit parasitics also play a key role in the drive
behavior. The inductance of the FET source lead (15 nano-
henries typical) is generally small in comparison to the lay-
out inductance. To model this network, an approximation of
30 nanohenries per inch of PC trace can be used. In addi-
tion, the inductance between the pins of the IC and the die
can be rounded off to 10 nanohenries per pin. It now
becomes apparent that circuit inductances can quickly
add up to 100 nanohenries, even with the best of PC lay-
outs. For this example, an estimate of 60 nh was used to
simulate the demonstration PC board. The equivalent cir-
cuit is shown in figure 10. A
10
volt pulse is applied to the
network using 6.2 ohms as the current limiting resistance.
Displayed is the resulting voltage and current waveform at
the totem-pole output.
by the peak
Figure 9. Circuit Parameters
Figure 10. Circuit Response
The shaded areas of each graph are of particular interest.
During this time, the lower totem-pole transistor is satu-
rated. The voltage at its collector is negative with respect to
it’s emitter (ground). In addition, a positive output current is
being supplied to the RLC network thru this saturated NPN
transistor’s collector. The IC specifications indicate that
neither of these two conditions are tolerable individually,
nevermind simultaneously. One approach is to increase
the limiting resistance to change the response from under-
damped to slightly overdamped. This will occur when:
R (gate) 2
Unfortunately, this also reduces the peak drive current,
thus increasing the switching times of the FETS - highly
undesirable. The alternate solution is to limit the peak
current, and alter the circuit to accept the underdamped
network.
3-109
相關(guān)PDF資料
PDF描述
SLUA159 Zero Voltage Switching Resonant Power Conversion
SM320C2810-EP Digital Signal Processors
SM320C2811-EP Digital Signal Processors
SM320C2812-EP Digital Signal Processors
SM320F2810PBKAEP Digital Signal Processors
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SLUA159 制造商:TI 制造商全稱(chēng):Texas Instruments 功能描述:Zero Voltage Switching Resonant Power Conversion
SLUC-MINIB-BLK 制造商:IXYS Corporation 功能描述:SOLAR USB CHARGER BLACK
SLUFD128MU1U-A 功能描述:USB閃存盤(pán) 128MB USB FLASHDRIVE USB Thumb Drive RoHS:否 制造商:Apacer 存儲(chǔ)容量:8 GB 最大工作電流: 最大工作溫度: 尺寸:53.4 mm x 23.3 mm x 7.5 mm 工作電源電壓:5 V
SLUFD128MU1UI-A 功能描述:USB閃存盤(pán) 128M FLASH DRIVE RoHS:否 制造商:Apacer 存儲(chǔ)容量:8 GB 最大工作電流: 最大工作溫度: 尺寸:53.4 mm x 23.3 mm x 7.5 mm 工作電源電壓:5 V
SLUFD1GU1U2 制造商:STEC Inc 功能描述:1GB USB DRIVE,ESD ENCLOSURE - Bulk