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參數(shù)資料
| 型號(hào)： | SLT-50HF1 |
| 元件分類： | 光敏三極管 |
| 英文描述： | PHOTO TRANSISTOR DETECTOR |
| 封裝： | HERMETICALLY SEALED, TO-18, 2 PIN |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 33K |
| 代理商： | SLT-50HF1 |
5200 St. Patrick St., Montreal
The Old Railway, Princes Street
Que., H4E 4N9, Canada
Ulverston, Cumbria, LA12 7NQ, UK
Tel: 514-768-8000
Tel: 01 229 581 551
Fax: 514-768-8889
Fax: 01 229 581 554
QF-84
SLT-50HF Series
NPN Phototransistor
Features
Wide receiving angle
NPN planar epitaxial process
Multiple sensitivity ranges
Extended temperature range
Hermetic TO-18 case with flat window
Description
The SLT-50HF series consists of an NPN silicon
planar
epitaxial
phototransistor
mounted
in
a
hermetically sealed TO-18 flat window package. The
wide angle of receiving sensitivity provides a relatively
uniform response over a wide field of view. The TO-18
hermetic package provides high reliability in hostile
environments. The various sensitivity ranges available
provide the desired output to meet multiple application
demands.
Absolute Maximum Ratings
Storage Temperature Range
-65
°C to +150°C
Operating Temperature Range
-55
°C to +125°C
Soldering Temperature (2)
260
°C
Power Dissipation @ 25
°C (1)
250mW
Collector
Base
Emitter
Dimensions in mm.
Tolerance: +/-0.13
5.08
1.27
12 min.
2.54
4.70
45
0.41 - 0.48
0.76
100°
90°
80°
70°
60°
50°
1.0
40°
30°
20°
10°
Half Angle = 40°
Directional Sensitivity Characteristics
20°
40°
60°
80°
100° 120°
0.0
0.2
0.4
0.6
0.8
0.4
0.6
0.8
1.0
Electrical Characteristics (TA=25
°C unless otherwise noted)
Symbol Parameter
MIN TYP MAX UNITS
TEST CONDITIONS
IC(ON)
On-State Collector Current:
SLT-50HF1 0.2
mA
VCE=5V, Ee=5mW/cm
2 (3)
SLT-50HF2 0.4
mA
VCE=5V, Ee=5mW/cm
2 (3)
SLT-50HF3 1.0
mA
VCE=5V, Ee=5mW/cm
2 (3)
SLT-50HF4 2.5
mA
VCE=5V, Ee=5mW/cm
2 (3)
ICEO
Collector Dark Current
50
nA
VCE=10V, Ee=0
BVCEO
Collector-Emitter Breakdown Voltage
40
V
IC=100
A, Ee=0
BVCBO
Collector-Base Breakdown Voltage
60
V
IC=100
A, Ee=0
BVECO
Emitter- Collector Breakdown Voltage
7.5
V
IC=100
A, Ee=0
VCE(SAT)
Collector to Emitter Saturation Voltage
0.4
V
IC=0.15mA, Ee =5mW/cm
2 (3)
tr, tf
Rise Time, Fall Time
3
S
RL=100
, I
C=800
A, V
CC=5V (4)
λ
P
Maximum Sensitivity Wavelength
930
nm
λ
R
Sensitivity Spectral Range
400
1100
nm
θ
1/2
Acceptance Half Angle
40
deg
(off center-line)
Notes: (1) derate @ 2.5mW/
°C above 25°C.
Specifications subject to change without notice.
(2) >2 mm from case for <5 sec.
103122 REV 1
(3) Ee = source @ 2854
°K
(4) Ee = source @
λ = 880 nm
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