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參數(shù)資料
| 型號(hào)： | SLT-50HL6 |
| 元件分類： | 光敏三極管 |
| 英文描述： | PHOTO TRANSISTOR DETECTOR |
| 封裝： | HERMETIC, TO-18, 3 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 27K |
| 代理商： | SLT-50HL6 |
5200 St. Patrick St., Montreal
The Old Railway, Princes Street
Que., H4E 4N9, Canada
Ulverston, Cumbria, LA12 7NQ, UK
Tel: 514-768-8000
Tel: 01 229 581 551
Fax: 514-768-8889
Fax: 01 229 581 554
QF-84
SLT-50HL Series
NPN Phototransistor
Features
Narrow receiving angle
Spectrally Matched to IRED
NPN Planar Epitaxial Process
Multiple Sensitivity Ranges
Extended Temperature Range
Hermetic TO-18 case with high dome lens
Description
The SLT-50HL series consists of an NPN silicon
planar
epitaxial
phototransistor
mounted
in
a
hermetically sealed TO-18 dome lens package. The
TO-18 hermetic package provides high reliability in
hostile environments. The various sensitivity ranges
available provide the desired output to meet multiple
application demands.
Absolute Maximum Ratings
Storage Temperature Range
-65
°C to +150°C
Operating Temperature Range
-55
°C to +125°C
Soldering Temperature (1)
260
°C
Power Dissipation @ 25
°C (2)
250mW
Collector
Base
Emitter
Dimensions in mm. (+/- 0.12)
5.1
0.8
12 Min
1.0
4.7
2.5
1.3
45°
Directional Sensitivity Characteristics
0.0
0.2
0.4
0.6
0.8
1.0
10°
20°
30°
40°
50°
60°
70°
80°
90°
100°
1.0
0.8
0.6
0.4
120°
Half Angle = 15°
20°
40°
60°
80°
100°
Electrical Characteristics (TA=25
°C unless otherwise noted)
Symbol Parameter
Min
Typ Max
Units Test Conditions
IC(ON)
On-State Collector Current:
SLT-50HL1 0.6
mA
VCE=5V, Ee=5mW/cm
2 (3)
SLT-50HL2 1.2
mA
VCE=5V, Ee=5mW/cm
2 (3)
SLT-50HL3 2.4
mA
VCE=5V, Ee=5mW/cm
2 (3)
SLT-50HL4 4.0
mA
VCE=5V, Ee=5mW/cm
2 (3)
SLT-50HL5 6.0
mA
VCE=5V, Ee=5mW/cm
2 (3)
SLT-50HL6 12.0
mA
VCE=5V, Ee=5mW/cm
2 (3)
ICEO
Collector Dark Current
50
nA
VCE=10V, Ee=0
BVCEO Collector-Emitter Breakdown Voltage
40
V
IC=100
A, Ee=0
BVCBO Collector-Base Breakdown Voltage
60
V
IC=100
A, Ee=0
BVECO Emitter-Collector Breakdown Voltage
7.5
V
IC=-100
A, Ee=0
VCE(SAT) Collector-Emitter Saturation Voltage
0.4
V
IC=1.0mA, IB=0.5mA, Ee=0
tr, tf
Rise Time, Fall Time
3
S
RL=100
, I
C=800
A, V
CC=5V (4)
λ
P
Maximum Sensitivity Wavelength
930
nm
λ
R
Sensitivity Spectral Range
400
1100
nm
θ
1/2
Acceptance Half Angle
15
deg
(off center-line)
Specifications subject to change without notice.
103224 REV 0
Notes: (1) >2 mm from case for <5 sec.
(3) Ee = source @ 2854
°K
(2) derate @ 2.5mW/
°C above 25°C.
(4) Ee = source @
λ = 880 nm
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