參數(shù)資料
型號(hào)： SLA5058
廠商： SANKEN ELECTRIC CO LTD
元件分類： JFETs
英文描述： N-channel General purpose
中文描述： 7 A, 150 V, 0.2 ohm, 5 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝： SIP-12
文件頁數(shù)： 1/1頁
文件大小： 20K
代理商： SLA5058
SLA5058
External dimensions
A
SLA
N-channel
General purpose
Absolute maximum ratings
Electrical characteristics
(T
a
=25
°
C)
I
Equivalent circuit diagram
Characteristic curves
I
D
-V
DS
Characteristics (Typical)
I
D
-V
GS
Characteristics (Typical)
R
DS(ON)
-I
D
Characteristics (Typical)
Re (yfs)-I
D
Characteristics (Typical)
R
DS
-T
C
Characteristics (Typical)
Capacitance-V
DS
Characteristics (Typical)
I
DR
-V
SD
Characteristics (Typical)
Safe Operating Area (SOA)
P
T
-Ta Characteristics
V
DS
(V)
I
D
10V
4V
2.8V
2.6V
2.4V
V
GS
=2.2V
7
6
5
4
3
2
1
0
0
2
4
6
8
10
V
GS
(V)
I
D
T=2
°
C
2
°
C
5
4
7
6
3
2
1
0
0
1
2
3
4
(V
DS
=10V)
–
°
C
R
D
)
4V
V
GS
=10V
200
150
100
50
0
0
1
2
3
4
5
6
7
I
D
(A)
I
D
(A)
(V
DS
=10V)
R
T
C
=–40
°
C
20
10
5
1
0.5
0.3
0.05
0.1
0.5
1
5
7
125
°
C
25
°
C
T
C
(
°
C)
(I
D
=3.5A)
R
D
)
4V
V
GS
=10V
500
400
200
100
300
0
–40
0
50
100
150
C
Coss
Crss
5000
500
1000
40
50
100
0
10
20
30
40
50
V
DS
(V)
Ciss
V
GS
=0V
f=1MHz
V
SD
(V)
I
D
1V
4
V
GS
=0V
5
4
7
6
3
2
1
0
0
0.5
1.0
1.5
V
DS
(V)
I
D
T
C
=25
°
C
1-circuit operation
10ms(1sho)
1ms
100
μ
s
20
10
5
0.5
0.1
0.05
0.01
0.5
1
5
10
50
200
100
I
D
(pulse) MAX
R
DS
(on) LIMITED
25
30
35
40
20
15
10
5
0
Without Heatsink
WthIninteHeasn
With Silicone Grease
Natural Cooling
All Circuits Operating
0
50
100
150
T
a
(
°
C)
P
T
2
3
1
4
5
6
7
8
9
10
11
12
* : V
DD
=25V, L=3.4mH, I
D
=7A, unclamped, R
G
=50
P
T
Symbol
Ratings
Unit
V
DSS
V
GSS
I
D
I
D (pulse)
E
AS*
150
V
V
+20, –10
±
7A
±
15 (PV
≤
1ms, duty
≤
1%)
100
5
(T
a
=25
°
C, with all circuits operating, without heatsink)
35
(T
c
=25
°
C, with all circuits operating, with infinite heatsink)
25
(Junction-Air, T
a
=25
°
C, with all circuits operating)
3.57
(Junction-Case, T
c
=25
°
C, with all circuits operating)
1000 (Between fin and lead pin, AC)
150
–40 to +150
A
mJ
W
W
°
C/W
°
C/W
Vrms
°
C
°
C
θ
j-a
θ
j-c
V
ISO
Tch
Tstg
Symbol
V
(BR)DSS
I
GSS
I
DSS
V
TH
Re
(
yfs
)
Specification
typ
Unit
V
nA
μ
A
V
S
m
m
pF
pF
pF
ns
ns
ns
ns
V
ns
Conditions
I
D
=100
μ
A, V
GS
=0V
V
GS
=20V
V
DS
=150V, V
GS
=0V
V
DS
=10V, I
D
=250
μ
A
V
DS
=10V, I
D
=3.5A
V
GS
=10V, I
D
=3.5A
V
GS
=4V, I
D
=3.5A
V
DS
=10V
f=1.0MHz
V
GS
=0V
I
D
=3.5A
V
DD
70V
R
L
=20
V
GS
=5V
I
SD
=7A, V
GS
=0V
I
F
=
±
100mA
min
150
max
100
100
2.0
1.0
4
9
R
DS(ON)
150
170
870
320
210
25
55
80
50
1.0
500
200
230
Ciss
Coss
Crss
td
(
on
)
t
r
td
(
off
)
t
f
V
SD
t
rr
1.5
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