參數(shù)資料
型號(hào): SLA5086
廠(chǎng)商: SANKEN ELECTRIC CO LTD
元件分類(lèi): JFETs
英文描述: P-channel General purpose
中文描述: 5 A, 60 V, 0.22 ohm, 5 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
封裝: SLA, SIP-12
文件頁(yè)數(shù): 1/1頁(yè)
文件大?。?/td> 34K
代理商: SLA5086
105
I
D
-V
DS
Characteristics (Typical)
I
D
-V
GS
Characteristics (Typical)
R
DS(ON)
-I
D
Characteristics (Typical)
Re
(yfs)
-I
D
Characteristics (Typical)
R
DS(ON)
-T
C
Characteristics (Typical)
Capacitance-V
DS
Characteristics (Typical)
I
DR
-V
SD
Characteristics (Typical)
Safe Operating Area (SOA)
P
T
-T
a
Characteristics
Characteristic curves
(T
a
=25
°
C)
Symbol
Ratings
Unit
V
DSS
V
GSS
I
D
I
D(
pulse
)
60
±
20
5
V
V
A
A
10 (
PW
1ms, duty
25%
)
5 (
Ta=25
°
C, with all circuits operating, without heatsink
)
30 (
Tc=25
°
C,with all circuits operating, with infinite heatsink
)
25 (
Junction-Air, Ta=25
°
C, with all circuits operating
)
4.17 (
Junction-Case, Tc=25
°
C, with all circuits operating
)
1000 (
Between fin and lead pin, AC
)
150
40 to +150
W
θ
j-a
θ
j-c
V
ISO
Tch
Tstg
°
C/W
°
C/W
Vrms
°
C
°
C
P
T
I
Equivalent circuit diagram
Absolute maximum ratings
Electrical characteristics
(T
a
=25
°
C)
Symbol
Unit
Conditions
V
(BR)DSS
I
GSS
I
DSS
V
TH
Re
(
yfs
)
R
DS(ON)
Ciss
Coss
Crss
td
(
on
)
t
r
td
(off)
t
f
V
SD
t
rr
60
V
nA
μ
A
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
I
D
=
100
μ
A, V
GS
=0V
V
GS
=
±
20V
V
DS
=
60V, V
GS
=0V
V
DS
=
10V, I
D
=
250
μ
A
V
DS
=
10V, I
D
=
3A
V
GS
=
10V, I
D
=
3A
V
DS
=
10V,
f=1.0MHz,
V
GS
=0V
I
D
=
3A, V
DD
20V,
R
L
=6.67
,
V
GS
=
5V,
see Fig. 4 on page 16.
I
SD
=
5A, V
GS
=0V
I
SD
=3A, V
GS
=0V, di/dt=100A/
μ
s
±
100
100
2.0
1.0
4
6
0.14
790
310
90
40
110
160
80
1.0
85
0.22
1.5
Specification
typ
min
max
SLA5086
P-channel
General purpose
External dimensions
A
SLA (12-pin)
2
1
3
4
5
10
12
11
6
7
8
9
0
2
4
6
8
2
0
4
6
8
10
10
V
DS
(V)
I
D
(
(
T
a
=25
°
C
)
V
GS
=
2.5V
2.7V
3.0V
3.3V
3.5V
3.7V
1
4
0
1
2
3
4
5
V
GS
(V)
0
6
8
10
4
2
I
D
(
T
a
=125
°
C
25
°
C
40
°
C
(V
DS
=
10V)
0
6
8
2
4
10
0
0.10
0.05
0.15
0.20
0.30
0.25
I
D
(A)
R
D
(
)
(T
a
=25
°
C)
V
GS
=
10V
4V
00
0.5
1.0
1.5
10
8
6
I
D
(
V
SD
(V)
4
2
(T
a
=25
°
C)
4V
0
V
GS
=
10V
40
0
50
100
150
T
C
(
°
C)
0
0.05
0.10
0.15
0.20
0.25
0.30
0.35
R
D
(
)
V
GS
=
4V
10V
(I
D
=
3A)
0.05
0.1
0.1
1
1
I
D
(A)
R
50
10
10
(V
DS
=
10V)
T
a
=
40
°
C
125
°
C
25
°
C
0
10
20
30
40
50
10
100
1000
5000
V
DS
(V)
C
GS
=0V
V
(T
a
=25
°
C)
Ciss
Coss
Crss
0.1
1
10
100
0.1
1
20
10
I
D
(
V
DS
(V)
1m
1m
R
DS(ON
LMTED
100
μ
s
T
C
=25
°
C
1-Circuit Operation
25
40
35
30
15
20
10
5
0
0
50
100
150
T
a
(
°
C)
P
T
(
WthIninteHeasnk
Without Heatsink
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