
FET1
FET2
FET3
Symbol
Specification
min
typ
150
Unit
Conditions
Specification
min
typ
150
Unit
Conditions
Specification
min
typ
150
Unit
Conditions
max
max
max
V
(BR)DSS
I
GSS
I
DSS
V
TH
Re
(
yfs
)
V
nA
μ
A
V
S
m
m
pF
pF
pF
ns
ns
ns
ns
V
ns
I
D
=100
μ
A, V
GS
=0V
V
GS
=20V
V
DS
=150V, V
GS
=0V
V
DS
=10V, I
D
=250
μ
A
V
DS
=10V, I
D
=3.5A
V
GS
=10V, I
D
=3.5A
V
GS
=4V, I
D
=3.5A
V
DS
=10V
f=1.0MHz
V
GS
=0V
I
D
=3.5A
V
DD
R
L
=20
V
GS
=5V
I
SD
=7A, V
GS
=0V
I
F
=
±
100mA
V
nA
μ
A
V
S
m
m
pF
pF
pF
ns
ns
ns
ns
V
ns
I
D
=100
μ
A, V
GS
=0V
V
GS
=20V
V
DS
=150V, V
GS
=0V
V
DS
=10V, I
D
=250
μ
A
V
DS
=10V, I
D
=2.5A
V
GS
=10V, I
D
=2.5A
V
GS
=4V, I
D
=2.5A
V
DS
=10V
f=1.0MHz
V
GS
=0V
I
D
=2.5A
V
DD
R
L
=28
V
GS
=5V
I
SD
=5A, V
GS
=0V
I
F
=
±
100mA
V
nA
μ
A
V
S
m
m
pF
pF
pF
ns
ns
ns
ns
V
ns
I
D
=100
μ
A, V
GS
=0V
V
GS
=20V
V
DS
=150V, V
GS
=0V
V
DS
=10V, I
D
=250
μ
A
V
DS
=10V, I
D
=3.5A
V
GS
=10V, I
D
=3.5A
V
GS
=4V, I
D
=3.5A
V
DS
=10V
f=1.0MHz
V
GS
=0V
I
D
=3.5A
V
DD
R
L
=20
V
GS
=5V
I
SD
=7A, V
GS
=0V
I
F
=
±
100mA
100
100
2.0
100
100
2.0
100
100
2.0
1.0
7
1.0
3
1.0
4
12
80
85
5.5
330
370
380
95
25
25
50
55
40
1.1
180
9
R
DS(ON)
105
115
440
480
150
170
870
320
210
25
55
80
50
1.0
500
200
230
Ciss
Coss
Crss
td
(
on
)
t
r
td
(
off
)
t
f
V
SD
t
rr
1600
380
90
35
70
125
90
1.0
320
70V
70V
70V
1.5
1.5
1.5
Symbol
Ratings
FET2
150
+20, –10
±
5
±
10
Unit
FET1
FET3
V
DSS
V
GSS
I
D
I
D(
pulse
)*
V
V
A
A
W
W
±
7
±
15
±
7
±
15
P
T
5 (
T
a
=25
°
C, with all circuits operating, without heatsink
)
35 (
T
c
=25
°
C, with all circuits operating, with infinite heatsink
)
25 (
Junction-Air, T
a
=25
°
C, with all circuits operating
)
3.57 (
Junction-Case, T
c
=25
°
C, with all circuits operating
)
1000 (
Between fin and lead pin, AC
)
150
–40 to +150
*PW
≤
100
μ
s, duty
≤
50%
Electrical characteristics
θ
j-a
θ
j-c
V
ISO
Tch
Tstg
°
C/W
°
C/W
Vrms
°
C
°
C
SLA5054
External dimensions
A
SLA
N-channel
General purpose
Absolute maximum ratings
I
Equivalent circuit diagram
(T
a
=25
°
C)
Characteristic curves
I
D
-V
DS
Characteristics (Typical)
FET1
FET2
FET3
7
6
5
4
3
2
1
0
0
2
4
6
V
DS
(V)
I
D
8
10
1
4V
2.6V
2.4V
V
GS
=2.2V
I
D
-V
GS
Characteristics (Typical)
FET1
FET2
FET3
R
DS(ON)
-I
D
Characteristics (Typical)
FET1
FET2
FET3
V
GS
(V)
I
D
T=2
°
C
2
°
C
5
4
3
2
1
0
0
1
2
3
4
(V
DS
=10V)
–
°
C
V
DS
(V)
I
D
10V
4V
2.8V
2.6V
2.4V
5
4
3
2
1
0
0
2
4
6
8
10
V
GS
=2.2V
V
DS
(V)
I
D
10V
4V
2.8V
2.6V
2.4V
7
6
5
4
3
2
1
0
0
2
4
6
8
10
V
GS
=2.2V
V
GS
(V)
I
D
T2
°
C
2
°
C
–
°
C
7
6
5
4
3
2
1
0
0
1
2
3
4
(V
DS
=10V)
V
GS
(V)
I
D
T=2
°
C
2
°
C
5
4
7
6
3
2
1
0
0
1
2
3
4
(V
DS
=10V)
–
°
C
I
D
(A)
R
D
(
)
4V
V
GS
=10V
100
80
60
40
20
0
0
1
2
3
5
4
7
6
I
D
(A)
R
D
)
4V
400
500
300
200
100
00
1
2
3
4
5
V
GS
=10V
R
D
)
200
150
100
50
0
0
1
2
3
4
5
6
7
I
D
(A)
V
GS
=10V
4V
(T
a
=25
°
C)
Pin 4: NC
2
3
1
5
6
7
8
9
10
11
12
15
13
14
FET-1
FET-1
FET-2
FET-2
FET-3
FET-3