參數(shù)資料
型號: SLA5026
廠商: SANKEN ELECTRIC CO LTD
元件分類: JFETs
英文描述: General Purpose N-Channel FET(通用型N溝道場效應(yīng)管)
中文描述: 10 A, 100 V, 0.22 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝: SIP-12
文件頁數(shù): 1/1頁
文件大?。?/td> 21K
代理商: SLA5026
I
D
-V
DS
Characteristics (Typical)
I
D
-V
GS
Characteristics (Typical)
R
DS(ON)
-I
D
Characteristics (Typical)
Re
(yfs)
-I
D
Characteristics (Typical)
R
DS(ON)
-T
C
Characteristics (Typical)
Capacitance-V
DS
Characteristics (Typical)
I
DR
-V
SD
Characteristics (Typical)
Safe Operating Area (SOA)
P
T
-T
a
Characteristics
65
Characteristic curves
(T
a
=25
°
C)
Symbol
Unit
Conditions
V
(BR)DSS
I
GSS
I
DSS
V
TH
Re
(
yfs
)
100
V
nA
μ
A
V
S
m
m
pF
pF
ns
ns
ns
ns
V
ns
I
D
=100
μ
A, V
GS
=0V
V
GS
=
±
20V
V
DS
=100V, V
GS
=0V
V
DS
=10V, I
D
=250
μ
A
V
DS
=10V, I
D
=5A
V
GS
=10V, I
D
=5A
V
GS
=4V, I
D
=5A
V
DS
=10V, f=1.0MHz,
V
GS
=0V
I
D
=5A,
V
DD
50V,
R
L
=10
, V
GS
=5V,
see Fig. 3 on page 16.
I
SD
=10A, V
GS
=0V
I
SD
=
±
100mA
±
100
100
2.0
1.0
7
10
110
140
740
240
20
45
60
20
1.0
180
175
220
Ciss
Coss
td
(
on
)
t
r
td
(
off
)
t
f
V
SD
t
rr
1.4
(T
a
=25
°
C)
Symbol
Ratings
Unit
V
DSS
V
GSS
I
D
I
D(
pulse
)
E
AS
*
100
±
20
±
10
V
V
A
A
mJ
W
W
±
40 (PW
1ms)
70
5
(Ta=25
°
C, with all circuits operating, without heatsink)
35 (
Tc=25
°
C,
with all circuits operating, with infinite heatsink
)
25 (
Junction-Air, Ta=25
°
C, with all circuits operating
)
°
C/W
3.57 (
Junction-Case, Tc=25
°
C, with all circuits operating
)
°
C/W
1000 (Between fin and lead pin, AC)
150
–40 to +150
θ
j-a
θ
j-c
V
ISO
Tch
Tstg
Vrms
°
C
°
C
* :
V
DD
=25V, L=4.2mH, I
D
=5A, unclamped, R
G
=50
,
see Fig. E on page 15.
SLA5026
Specification
typ
min
max
P
T
R
DS(ON)
1
3
2
4
6
5
9
7
8
12
10
11
0
2
4
0
4
2
6
8
10
6
V
DS
(V)
I
D
8
10
3V
1
4
2.8V
2.6V
2.4V
0
1
2
0
4
2
6
8
10
3
V
GS
(V)
I
D
4
5
(V
DS
=10V)
T
C
=–40
°
C
T
C
=25
°
C
T
C
=125
°
C
0
2
4
0
150
50
100
200
6
I
D
(A)
R
D
)
8
10
V
GS
=4V
V
GS
=10V
0.05
0.5
0.1
0.3
1
0.5
5
10
20
I
D
(A)
R
1
10
5
(V
DS
=10V)
T
C
=–40
°
C
125
°
C
25
°
C
–40
0
0
100
150
50
200
250
300
50
T
C
(
°
C)
R
D
)
100
150
V
GS
=4V
10V
(I
D
=5A)
0
20
10
30
20
100
50
500
1000
2000
40
V
DS
(V)
C
50
Ciss
Coss
Crss
V
=0V
f=1MHz
0
0.5
1.0
1.5
0
4
2
6
8
10
V
SD
(V)
I
D
V
GS
=V
5
0.5
1
5
V
DS
(V)
50
10
0.1
0.5
5
1
10
50
100
I
D
10ms 1sho)
100
μ
s
100ms
(T
C
=25
°
C)
I
D
(pulse) max
R
DS ON
LMTED
25
30
35
40
20
15
10
5
0
0
50
100
150
T
a
(
°
C)
P
T
With Silicone Grease
Natural Cooling
All Circuits Operating
WthIninteHeasn
Without Heatsink
N-channel
General purpose
Absolute maximum ratings
I
Equivalent circuit diagram
Electrical characteristics
External dimensions
A
SLA
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