
I
D
-V
DS
Characteristics (Typical)
I
D
-V
GS
Characteristics (Typical)
R
DS(ON)
-I
D
Characteristics (Typical)
Re
(yfs)
-I
D
Characteristics (Typical)
R
DS(ON)
-T
C
Characteristics (Typical)
Capacitance-V
DS
Characteristics (Typical)
I
DR
-V
SD
Characteristics (Typical)
Safe Operating Area (SOA)
P
T
-T
a
Characteristics
67
Characteristic curves
SLA5031
(T
a
=25
°
C)
Symbol
Unit
Conditions
V
(BR)DSS
I
GSS
I
DSS
V
TH
Re
(
yfs
)
60
V
nA
μ
A
V
S
pF
pF
ns
ns
V
ns
I
D
=250
μ
A, V
GS
=0V
V
GS
=
±
10V
V
DS
=60V, V
GS
=0V
V
DS
=10V, I
D
=250
μ
A
V
DS
=10V, I
D
=5A
V
GS
=10V, I
D
=2.5A
V
GS
=4V, I
D
=2.5A
V
DS
=25V, f=1.0MHz,
V
GS
=0V
I
D
=5A, V
DD
30V,
V
GS
=5V,
see Fig. 3 on page 16.
I
SD
=5A, V
GS
=0V
I
SD
=
±
100mA
±
500
250
2.0
1.0
3.1
4.6
0.17
0.25
400
160
80
50
1.1
150
0.22
0.30
Ciss
Coss
t
on
t
off
V
SD
t
rr
1.5
(T
a
=25
°
C)
Symbol
Ratings
Unit
V
DSS
V
GSS
I
D
I
D(
pulse
)
E
AS
*
I
F
I
FSM
V
R
60
±
10
±
5
V
V
A
A
mJ
A
A
V
W
W
±
10 (PW
≤
1ms)
2
5 (PW
≤
0.5ms, Du
≤
25%)
10 (PW
≤
10ms, Single pulse)
120
5
(Ta=25
°
C, with all circuits operating, without heatsink)
35 (
Tc=25
°
C,
with all circuits operating, with infinite heatsink
)
25 (
Junction-Air, Ta=25
°
C, with all circuits operating
)
°
C/W
3.57 (
Junction-Case, Tc=25
°
C, with all circuits operating
)
°
C/W
1000 (Between fin and lead pin, AC)
150
–40 to +150
* : V
DD
=20V, L=1mH, I
D
=1.7A, unclamped, see Fig. E on page 15.
I
Equivalent circuit diagram
P
T
θ
j-a
θ
j-c
V
ISO
Tch
Tstg
Vrms
°
C
°
C
Specification
typ
min
max
Symbol
Unit
Conditions
V
R
V
F
I
R
t
rr
120
V
V
I
R
=10
μ
A
I
F
=1A
V
R
=120V
I
F
=
±
100mA
1.0
1.2
10
μ
A
ns
100
Speciication
typ
min
max
R
DS(ON)
1
2
5
4
6
3
8
9
12
11
10
7
0
2
10
10
8
4
0
V
DS
(V)
I
D
4
6
8
6
2
V
GS
=3V
4V
3.5V
10V
6
0
8
10
0
1
2
3
4
D
V
GS
(V)
5
4
2
(V
DS
=10V)
25
°
C
125
°
C
T
C
=–40
°
C
0
0
1
7
10
0.1
0.2
0.3
I
D
(A)
R
D
)
2
3
4
5
6
8
9
4V
V
GS
=10V
0.3
0.05
0.5
I
D
(A)
1
1
5
10
R
5
10
0.5
0.1
(V
DS
=10V)
25
°
C
125
°
C
T
C
=–40
°
C
–40
0
0
50
100
150
0.1
0.2
0.3
0.4
R
D
)
T
C
(
°
C)
(I
D
=2.5A)
4V
V
GS
=10V
0
10
20
30
40
50
10
100
1000
V
DS
(V)
C
500
50
GS
=0V
V
Ciss
Coss
Crss
00
1.0
1.5
6
8
10
I
D
V
SD
(V)
0.5
4
2
4V
10V
V
GS
=0V
0.5
0.1
1
5
10
50
100
1
5
10
20
I
D
V
DS
(V)
0.5
(T
C
=25
°
C)
I
D
(pulse) max
1ms
10ms 1sho)
R
DS ON
LMTED
100
μ
s
25
30
35
40
20
15
10
5
0
0
50
100
150
T
a
(
°
C)
P
T
With Silicone Grease
Natural Cooling
All Circuits Operating
WthIninteHeasn
Without Heatsink
N-channel
With built-in flywheel diode
Absolute maximum ratings
Electrical characteristics
G
Diode for flyback voltage absorption
External dimensions
A
SLA