
Product Specification
SL1 ICS31 01
Rev. 1.2
July 2000
Page 15 of 22
Public
13 Electrical Specifications
ABSOLUTE MAXIMUM RATINGS
1, 2
SYMBOL
T
stg
T
j
PARAMETER
TEST
CONDITIONS
RATING
UNIT
Storage Temperature Range
Junction Temperature
- 55 to
+
140
- 55 to
+
140
°C
°C
V
ESD
I
max LA-LB
Maximum Input Peak Current
3
NOTES:
1.
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any conditions other than those described in the Operating Conditions and
Electrical Characteristics section of this specification is not implied.
2.
This product includes circuitry specifically designed for the protection of its internal devices from the damaging effects of excessive
static charge. Nonetheless, it is suggested that conventional precautions be taken to avoid applying greater than the rated maxima.
3.
At 13.56 MHz, including current via resonance capacitor.
ESD Voltage Immunity
MIL-STD-883D,
Method 3015.7,
Human Body Model
± 2
kV
peak
± 80
mA
peak
OPERATING CONDITIONS
SYMBOL
T
amb
T
j op
I
LA-LB
PARAMETER
TEST
CONDITIONS
MIN
TYP
1
MAX
UNIT
Operating Ambient Temperature
Operating Junction Temperature
Input Current
2
Minimum Supply Voltage
3
for READ/EAS
Minimum Supply Voltage
3
for WRITE
Minimum Supply Voltage
3
for READ/EAS/WRITE
Operating Frequency
4
- 25
- 25
+
70
+
85
50
°C
°C
mA
rms
V
LA-LB rd
Standard Mode
± 3.1
± 3.7
V
peak
V
LA-LB wr
Standard Mode
± 3.6
± 4.1
V
peak
V
LA-LB fm
f
op
NOTES:
1.
Typical ratings are not guaranteed. These values listed are at room temperature.
2.
Including current via resonance capacitor.
3.
The voltage between LA and LB is limited by the on-chip voltage limitation circuitry (corresponding to parameter I
LA-LB
).
4.
Bandwidth limitation (±7 kHz) according to ISM band regulations.
Fast Mode
± 5.2
13.560
± 6.5
13.567
V
peak
MHz
13.553
ELECTRICAL CHARACTERISTICS
T
amb
= - 25 to +70 °C
SYMBOL
C
res
P
min
PARAMETER
TEST
CONDITIONS
V
LA-LB
= 2 V
rms
V
LA-LB
= 2 V
rms
V
V
max
V
V
max
Standard Mode,
m
≥
10 %
Fast Mode,
m
≥
10 %
m
≥
10 %
MIN
TYP
1
MAX
UNIT
Input Capacitance between LA - LB
2
Minimum Operating Supply Power
3
Minimum Modulation of RF Voltage
for Demodulator Response
Maximum Modulation of RF Voltage
for Demodulator Response
Modulation Pulse Length
of RF Voltage
Modulation Start-Pulse Length
of RF Voltage
4
Demodulator Response Time
Modulator ON Resistance
EEPROM Data Retention
EEPROM Write Endurance
92
97
450
102
pF
μW
m
min
m
- V
+ V
- V
+ V
max
min
min
=
10
14
%
m
max
m
max
min
min
=
30
%
t
P sm
3.54
5.31
5
9.44
μs
t
P fm
t
D
R
mod
t
ret
n
write
15.34
0.1
50
10
100 000
17.11
5
0.8
115
20.06
2.4
250
μs
μs
T
amb
≤
55 °C
Years
Cycles
NOTES:
1.
Typical ratings are not guaranteed. These values listed are at room temperature.
2.
Measured with an HP4285A LCR meter at 13.56 MHz.
3.
Including losses in resonant capacitor and rectifier.
4.
The given values are derived from the 13.56 MHz system frequency.
5.
Recommended values for pulse duration generated at the read/write device.