參數(shù)資料
型號: SL12-L
廠商: 美麗微半導(dǎo)體有限公司
英文描述: Low VF Chip Schottky Barrier Diodes - Silicon epitaxial planer type
中文描述: 低VF肖特基二極管芯片-硅外延式龍門
文件頁數(shù): 2/2頁
文件大?。?/td> 69K
代理商: SL12-L
0.1
1.0
.01
10
50
RATING AND CHARACTERISTIC CURVES (SL12-L THRU SL14-L)
FIG.1-TYPICAL FORWARD
CHARACTERISTICS
FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT,(A)
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
PEAK FORWAARD SURGE CURRENT,(A)
FIG.5-TYPICAL JUNCTION CAPACITANCE
REVERSE VOLTAGE,(V)
JUNCTION CAPACITANCE,(pF)
INSTANTANEOUS FORWARD CURRENT,(A)
FORWARD VOLTAGE,(V)
Pulse Width 300us
1% Duty Cycle
0.2
0.4
0.6
0.8
1.0
1.2
0
350
300
250
200
150
100
50
0
20
10
30
50
40
.01 .05 .1 .5 1 5 10 50 100
.1 .3 .5 .7 .9 1.1 1.3 1.5
3.0
Single Phase
Half Wave 60Hz
Resistive Or Inductive Load
AMBIENT TEMPERATURE ( C)
.1
1.0
10
100
FIG.3 - TYPICAL REVERSE
CHARACTERISTICS
REVERSE LEAKAGE CURRENT, (mA)
PERCENTAGE RATED PEAK REVERSE VOLTAGE
0 20 40 60 80 100 120 140
.01
Tj=75 C
Tj=25 C
Tj=25 C
NUMBER OF CYCLES AT 60Hz
1
10
5
50
100
Tj=25 C
8.3ms Single Half
Sine Wave
JEDEC method
0
0 20 40
60 80 100 120 140 160 180 200
SL12-L
SL13-L / SL14-L
相關(guān)PDF資料
PDF描述
SL13-L Low VF Chip Schottky Barrier Diodes - Silicon epitaxial planer type
SL14-L Low VF Chip Schottky Barrier Diodes - Silicon epitaxial planer type
SL12-MH Low VF Chip Schottky Barrier Diodes - Silicon epitaxial planer type
SL13-MH Low VF Chip Schottky Barrier Diodes - Silicon epitaxial planer type
SL14-MH Low VF Chip Schottky Barrier Diodes - Silicon epitaxial planer type
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SL12-M 制造商:FORMOSA 制造商全稱:Formosa MS 功能描述:Silicon epitaxial planer type
SL12-MH 制造商:FORMOSA 制造商全稱:Formosa MS 功能描述:Low VF Chip Schottky Barrier Diodes - Silicon epitaxial planer type
SL12N 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:Low VF Schottky Barrier Diodes
SL-12N 制造商:Shinagawa Shoko 功能描述:
SL12-N 制造商:WILLAS 制造商全稱:WILLAS 功能描述:1.0A LOW VF SCHOTTKY BARRIER RECTIFIERS-20V-40V SOD-323-L PACKAGE