參數(shù)資料
型號(hào): SL12-MH
廠商: 美麗微半導(dǎo)體有限公司
英文描述: Low VF Chip Schottky Barrier Diodes - Silicon epitaxial planer type
中文描述: 低VF肖特基二極管芯片-硅外延式龍門
文件頁數(shù): 1/2頁
文件大小: 66K
代理商: SL12-MH
SL12-MH THRU SL14-MH
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizng Flame
Retardant EpoxyMolding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
Mechanical data
Case : Molded plastic, JEDEC SOD-123H
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : 0.0393 gram
(V)
(V)
(V)
(V)
(
o
C)
SL12-MH
L2
20
14
20
0.38
SL13-MH
L3
30
14
20
0.40
SL14-MH
L4
40
28
40
0.40
SYMBOLS
MARKING
CODE
-55 to +125
Operating
temperature
V
RRM
*1
V
RMS
*2
V
R
*3
V
F
*4
MAXIMUM RATINGS
(AT T
A
=25
o
C unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
Forward rectified current
See Fig.2
I
O
1.0
A
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
I
FSM
25
A
V
R
= V
RRM
T
A
= 25
o
C
1.0
mA
V
R
= V
RRM
T
A
= 100
o
C
10
mA
Thermal resistance
Junction to ambient
R
q
JA
42
o
C / w
Diode junction capacitance
f=1MHz and applied 4vDC reverse voltage
C
J
130
pF
Storage temperature
T
STG
-55
+150
o
C
Reverse current
I
R
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
Low VF Chip Schottky Barrier Diodes
Silicon epitaxial planer type
Formosa MS
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.055(1.4)
0.035(0.9)
0.028(0.7)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
SOD-123H
0.031(0.8) Typ.
相關(guān)PDF資料
PDF描述
SL13-MH Low VF Chip Schottky Barrier Diodes - Silicon epitaxial planer type
SL14-MH Low VF Chip Schottky Barrier Diodes - Silicon epitaxial planer type
SL12-M Silicon epitaxial planer type
SL14 Silicon epitaxial planer type
SL14 LOW VF SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
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