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參數(shù)資料
| 型號(hào)： | SL12-E3/5AT |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類(lèi)： | 整流器 |
| 英文描述： | 1.5 A, 20 V, SILICON, RECTIFIER DIODE, DO-214AC |
| 封裝： | ROHS COMPLIANT, PLASTIC, SMA, 2 PIN |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大小： | 324K |
| 代理商： | SL12-E3/5AT |
SL12 & SL13
Vishay General Semiconductor
www.vishay.com
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88740
Revision: 22-Jan-08
2
Note:
(1) Pulse test: 300 s pulse width, 1 % duty cycle
Note:
(1) P.C.B. mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
SL12
SL13
UNIT
Maximum instantaneous forward voltage at (1)
IF = 0.1 A
IF = 1.0 A
TA = 125 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
VF
0.230
0.360
0.340
0.445
V
Maximum DC reverse current
at rated DC blocking voltage (1)
TA = 25 °C
TA = 100 °C
IR
0.2
6.0
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SL12
SL13
UNIT
Maximum thermal resistance (1)
RθJA
RθJL
88
28
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SL13-E3/61T
0.064
61T
1800
7" diameter plastic tape and reel
SL13-E3/5AT
0.064
5AT
7500
13" diameter plastic tape and reel
SL13HE3/61T (1)
0.064
61T
1800
7" diameter plastic tape and reel
SL13HE3/5AT (1)
0.064
5AT
7500
13" diameter plastic tape and reel
Figure 1. Forward Current Derating Curve
0
0.5
1.0
1.5
2.0
50
60
70
80
90 100 110 120 130 140 150 160 170
Resistive or Inductive Load
P.C.B. Mounted on
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
A
v
er
age
F
o
rw
ard
C
u
rrent
(A)
Lead Temperature (°C)
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
1
10
100
0
10
20
30
40
50
8.3 ms Single Half Sine-Wave
at rated TL
Number of Cycles at 60 Hz
P
eak
F
o
rw
ard
S
u
rge
C
u
rrent
(A)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SL12-E3/61T | 1.5 A, 20 V, SILICON, RECTIFIER DIODE, DO-214AC |
| SL13HE3/61T | 1.5 A, 30 V, SILICON, RECTIFIER DIODE, DO-214AC |
| SL13-E3/61T | 1.5 A, 30 V, SILICON, RECTIFIER DIODE, DO-214AC |
| SL13HE3/5AT | 1.5 A, 30 V, SILICON, RECTIFIER DIODE, DO-214AC |
| SL12.TCT | 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SL12HE3/5AT | 功能描述:肖特基二極管與整流器 20 Volt 1.0 Amp 50 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| SL12HE3/61T | 功能描述:肖特基二極管與整流器 20 Volt 1.0 Amp 50 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| SL12-L | 制造商:FORMOSA 制造商全稱(chēng):Formosa MS 功能描述:Low VF Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| SL12-M | 制造商:FORMOSA 制造商全稱(chēng):Formosa MS 功能描述:Silicon epitaxial planer type |
| SL12-MH | 制造商:FORMOSA 制造商全稱(chēng):Formosa MS 功能描述:Low VF Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
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