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參數(shù)資料
| 型號(hào)： | SL13HE3/61T |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 1.5 A, 30 V, SILICON, RECTIFIER DIODE, DO-214AC |
| 封裝： | ROHS COMPLIANT, PLASTIC, SMA, 2 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 324K |
| 代理商： | SL13HE3/61T |
SL12 & SL13
Vishay General Semiconductor
Document Number: 88740
Revision: 22-Jan-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Low VF Surface Mount Schottky Rectifier
FEATURES
Low profile package
Ideal for automated placement
Guardring for overvoltage protection
Low power losses, high efficiency
Very low forward voltage drop
High surge capability
Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
Solder dip 260 °C, 40 s
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency inverters,
freewheeling,
dc-to-dc
converters,
and
polarity
protection applications.
MECHANICAL DATA
Case: DO-214AC (SMA)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: Color band denotes the cathode end
PRIMARY CHARACTERISTICS
IF(AV)
1.5 A
VRRM
20 V, 30 V
IFSM
50 A
VF
0.34 V
TJ max.
125 °C
DO-214AC (SMA)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SL12
SL13
UNIT
Device marking code
SL2
SL3
Maximum repetitive peak reverse voltage
VRRM
20
30
V
Maximum RMS voltage
VRMS
14
21
V
Maximum DC blocking voltage
VDC
20
30
V
Maximum average forward rectified current at TL = 105 °C (Fig. 1)
IF(AV)
1.5
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
50
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/s
Operating junction temperature range
TJ
- 55 to + 125
°C
Storage temperature range
TSTG
- 55 to + 150
°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SL13-E3/61T | 1.5 A, 30 V, SILICON, RECTIFIER DIODE, DO-214AC |
| SL13HE3/5AT | 1.5 A, 30 V, SILICON, RECTIFIER DIODE, DO-214AC |
| SL12.TCT | 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| SL24.TCT | 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| SL15.TCT | 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SL13-L | 制造商:FORMOSA 制造商全稱:Formosa MS 功能描述:Low VF Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| SL13-M | 制造商:FORMOSA 制造商全稱:Formosa MS 功能描述:Low VF Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| SL13-M3-5AT | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Low VF Surface Mount Schottky Rectifier |
| SL13-M3-61T | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Low VF Surface Mount Schottky Rectifier |
| SL13-MH | 制造商:FORMOSA 制造商全稱:Formosa MS 功能描述:Low VF Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
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