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參數(shù)資料
| 型號： | SIW3500GIG3 |
| 廠商： | RF MICRO DEVICES INC |
| 元件分類： | 通信及網(wǎng)絡(luò) |
| 英文描述： | SPECIALTY TELECOM CIRCUIT, PBGA96 |
| 封裝： | 6 X 6 MM, GREEN, VFBGA-96 |
| 文件頁數(shù)： | 2/28頁 |
| 文件大小： | 795K |
| 代理商： | SIW3500GIG3 |
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Preliminary
10 of 28
SiW3500
60 0066 R00JIrf SiW3500 UltimateBlue SoC DS
System Specifications
Absolute Maximum Ratings
Recommended Operating Conditions
ESD Rating
Electrical Characteristics
DC Specification (TOP = +25°C, VDD_P = 3.0V)
AC Characteristics (TOP = +25°C, VDD_P = 3.0V, CLOAD = 15pF)
Parameter
Description
Min
Max
Unit
VDD_C
Digital circuit supply voltage
-0.3
3.63
V
VCC
Analog circuit supply voltage
-0.3
3.63
V
VDD_P, VDD_P_ALT
I/O supply voltage
-0.3
3.63
V
VBATT_ANA
Analog regulator supply voltage
-0.3
3.63
V
VBATT_DIG
Digital regulator supply voltage
-0.3
3.63
V
TST
Storage temperature
-55
+125
°C
RFMAX
Maximum RF input level
–
+5
dBm
Note: Absolute maximum ratings indicate limits beyond which the useful life of the device may be impaired or damage may occur.
Parameter
Description
Min
Max
Unit
TOP
Operating temperature (industrial grade)
-40
+85
°C
TEOP
Extended operating temperature1
-40
+105
°C
VBATT_ANA
Unregulated supply voltage into internal analog regulator
2.3
3.63
V
VBATT_DIG
Unregulated supply voltage into internal digital regulator
2.3
3.63
V
VCC
Regulated supply voltage directly into analog circuits
1.71
1.89
V
VDD_C
Regulated supply voltage directly into digital circuits
1.62
1.98
V
VDD_P , VDD_P_ALT
Digital interface I/O supply voltage
1.62
3.63
V
1.The extended operating temperature range applies to special order devices qualified for extended operating range. Please contact factory for details.
Symbol
Description
Rating
ESD
ESD protection - all pins
2000 V
Note: This device is a high performance RF integrated circuit with an ESD rating of 2,000 volts (HBM conditions per Mil-Std-883, Method 3015).
Handling and assembly of this device should only be done using appropriate ESD controlled processes.
Symbol
Description
Min.
Typ
Max.
Unit
VIL
Input low voltage
GND-0.1
–
0.3.VDD_P
V
VIH
Input high voltage
0.7.VDD_P
–
VDD_P
V
VOL
Output low voltage
GND
–
0.2.VDD_P
V
VOH
Output high voltage
0.8.VDD_P
–
VDD_P
V
IOH
Output high current
–
1
–
mA
IOL
Output low current
–
1
–
mA
IILI
Input leakage current
–
1
–
A
Symbol
Description
Typ
Max.
Unit
tr
Rise time
5
11
ns
tf
Fall time
5
8
ns
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