- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄365568 > SIP41101 (Vishay Intertechnology,Inc.) Half-Bridge N-Channel MOSFET Driver With Break-Before-Make PDF資料下載
參數(shù)資料
| 型號： | SIP41101 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Half-Bridge N-Channel MOSFET Driver With Break-Before-Make |
| 中文描述： | 半橋N溝道MOSFET驅(qū)動器的決裂之前，請 |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 102K |
| 代理商： | SIP41101 |
SiP41101
Vishay Siliconix
New Product
Document Number: 72377
S-31578—Rev. A, 11-Aug-03
www.vishay.com
5
FUNCTIONAL BLOCK DIAGRAM
Figure 2.
IN
SD
GND
V
DD
OUT
H
S
H
S
L
OUT
L
V
DD
BOOT
V
BBM
-
+
Undervoltage
Levelshift
Sync EN
DETAILED OPERATION
Break-Before-Make Function
The SiP41101 has an internal break-before-make function to
ensure that both high-side and low-side MOSFETs are not
turned on at the same time. The high-side drive (OUT
H
) will not
turn on until the low-side gate drive voltage (measured at the
OUT
L
pin) is less than V
BBM
, thus ensuring that the low-side
MOSFET is turned off. The low-side drive (OUT
L
) will not turn
on until the voltage at the MOSFET half-bridge output
(measured at the S
L
pin) is less than V
BBM
, thus ensuring that
the high-side MOSFET is turned
Under Voltage Lockout Function
The SiP41101 has an internal under-voltage lockout feature to
prevent driving the MOSFET gates when the supply voltage (at
V
DD
) is less than the under-voltage lockout specification
(V
UVL
). This prevents the output MOSFETs from being turned
on without sufficient gate voltage to ensure they are fully on.
There is hysteresis included in this feature to prevent lockout
from cycling on and off.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
100
10
500
100
20
1000
200
C
Frequency (kHz)
50
0.3
10
1
R
Load Capacitance (nF)
t
r(OUTL)
t
f(OUTH)
t
f(OUTL)
Rise and Fall Time vs. C
LOAD
3
50
40
30
20
10
0
t
r(OUTH)
I
DD
Supply Current vs. Frequency
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SiP41101DQ-T1 | Half-Bridge N-Channel MOSFET Driver With Break-Before-Make |
| SIP41109 | Half-Bridge N-Channel MOSFET Driver for DC/DC Conversion |
| SIP41109DB | Half-Bridge N-Channel MOSFET Driver for DC/DC Conversion |
| SIP41109DY-T1-E3 | Half-Bridge N-Channel MOSFET Driver for DC/DC Conversion |
| SIP41110DB | Half-Bridge N-Channel MOSFET Driver for DC/DC Conversion |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SIP41101DQ-T1 | 功能描述:功率驅(qū)動器IC H-Bridge N-Ch High Side MOSFET RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| SIP41101DQ-T1-E3 | 功能描述:功率驅(qū)動器IC H-Bridge N-Ch High Side MOSFET RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| SIP41103DM-T1 | 功能描述:功率驅(qū)動器IC H-Bridge N-Ch MOSFET RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| SIP41103DM-T1-E3 | 功能描述:功率驅(qū)動器IC H-Bridge N-Ch MOSFET RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| SIP41104DQ-T1 | 制造商:Vishay Siliconix 功能描述:MOSFET DRVR 0V 1.9A 2-OUT HI/LO SIDE HALF BRDG NON-INV 8SOIC - Tape and Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。