參數(shù)資料
型號(hào)： SIP41101
廠商： Vishay Intertechnology,Inc.
英文描述： Half-Bridge N-Channel MOSFET Driver With Break-Before-Make
中文描述： 半橋N溝道MOSFET驅(qū)動(dòng)器的決裂之前，請(qǐng)
文件頁數(shù)： 2/6頁
文件大?。?/td> 102K
代理商： SIP41101
SiP41101
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72377
S-31578—Rev. A, 11-Aug-03
ABSOLUTE MAXIMUM RATINGS (ALL VOLTAGES REFERENCED TO GND = 0 V)
V
DD
V
IN
V
SH
V
BOOT
Storage Temperature
Operating Junction Temperature
7 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
-0.3 V to V
DD
+ 0.3 V
30 V
V
SH
+ 7 V
-40 to 150 C
125 C
Power Dissipation
a
TSSOP-16
925 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Impedance (
TSSOP-16
Notes
a.
Device mounted with all leads soldered or welded to PC board.
JA
)
a
135 C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING RANGE (ALL VOLTAGES REFERENCED TO GND = 0 V)
V
DD
V
BOOT
4.5 V to 5.5 V
4.5 V to 30 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
BOOT
Operating Temperature Range
100 nF to 1 F
-40 to 85 C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
SPECIFICATIONS
a
Test Conditions Unless Specified
Limits
Typ
b
Parameter
Symbol
V
DD
= 4.5 to 5.5 V, V
BOOT
= 4.5 to 30 V, T
A
= -40 to 85 C
Min
a
Max
a
Unit
Power Supplies
Supply Voltage
V
DD
4.5
5.5
V
Supply Current
I
DD
f
IN
= 300 kHz, SD = H, Sync_en = H
see Figure 1
25
40
mA
Quiescent Current
I
DDQ
IN = L, SD = H, Sync_en = H, No Load
1.4
2.5
A
Reference Voltage
Break-Before-Make
V
BBM
V
DD
= 5.5 V
2.5
V
Logic Inputs — IN, Sync En, SD
Input High
V
IH
V
IL
2.5
V
Input Low
1.0
Undervoltage Lockout
V
DD
Undervoltage
Undervoltage Hysteresis
V
UVL
V
HYST
V
DD
Rising
2.5
3.6
4.4
V
400
mV
Bootstrap Diode
Forward Voltage
V
F
I
F
= 10 mA
0.65
V
MOSFET Drivers
High Side Drive Current
High-Side Drive Current
c
I
PKH(source)
I
PKH(sink)
V
= 4 5 V V
=2 25V
V
BOOT
- V
SH
= 4.5 V, V
OUTH
-V
SA
=2.25V
3.0
3.0
A
Low Side Drive Current
Low-Side Drive Current
c
I
PKL(source)
I
PKL(sink)
R
DH(source)
R
DH(sink)
R
DL(source)
R
DL(sink)
= 4 5 V V
=2 25V
V
DD
= 4.5 V, V
OUTL
=2.25V
4.1
4.1
High Side Driver Impedance
High-Side Driver Impedance
= 4 5 V S
V
DD
= 4.5 V, S
H
= GND
0.75
1.3
0.75
1.3
Low Side Driver Impedance
Low-Side Driver Impedance
= 4 5 V
V
DD
= 4.5 V
0.55
1.1
0.55
1.1
相關(guān)PDF資料
PDF描述
SiP41101DQ-T1 Half-Bridge N-Channel MOSFET Driver With Break-Before-Make
SIP41109 Half-Bridge N-Channel MOSFET Driver for DC/DC Conversion
SIP41109DB Half-Bridge N-Channel MOSFET Driver for DC/DC Conversion
SIP41109DY-T1-E3 Half-Bridge N-Channel MOSFET Driver for DC/DC Conversion
SIP41110DB Half-Bridge N-Channel MOSFET Driver for DC/DC Conversion
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SIP41101DQ-T1 功能描述:功率驅(qū)動(dòng)器IC H-Bridge N-Ch High Side MOSFET RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
SIP41101DQ-T1-E3 功能描述:功率驅(qū)動(dòng)器IC H-Bridge N-Ch High Side MOSFET RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
SIP41103DM-T1 功能描述:功率驅(qū)動(dòng)器IC H-Bridge N-Ch MOSFET RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
SIP41103DM-T1-E3 功能描述:功率驅(qū)動(dòng)器IC H-Bridge N-Ch MOSFET RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
SIP41104DQ-T1 制造商:Vishay Siliconix 功能描述:MOSFET DRVR 0V 1.9A 2-OUT HI/LO SIDE HALF BRDG NON-INV 8SOIC - Tape and Reel
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*