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參數(shù)資料
| 型號： | SID2010 |
| 廠商： | Sanken Electric Co.,Ltd. |
| 英文描述： | 3phi Round Infrared LED |
| 中文描述： | 3phi圓形紅外發(fā)光二極管 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 27K |
| 代理商： | SID2010 |
57
Forward voltage
V
F
(V)
typ
max
1.3
1.3
1.5
Condition
I
F
(mA)
50
50
Part
Number
Reverse current
I
R
(
μ
A)
max
10
10
Condition
V
R
(V)
5
5
Optical Power
I
e
(mW/sr)
typ
7.0
14
Peak wavelength
λ
P
(nm)
typ
940
940
Condition
I
F
(mA)
50
50
Spectrum half width
λ
(nm)
typ
50
50
Condition
I
F
(mA)
50
50
Lens color
Condition
Chip
material
3
φ
Round Infrared LED
SID2010 Series
Directivity (Typical)
External Dimensions
Symbol
I
F
I
F
I
FP
V
R
Top
Tstg
Unit
mA
mA/
°
C
mA
V
°
C
°
C
Rating
150
1.33
1000
5
30 to +85
30 to +100
Condition
Above 25
°
C
f=1kHz, tw
≤
10
μ
s
Absolute maximum ratings (Ta=25
°
C)
SID2010Series
Tolerance:
±
0.3
(Unit: mm)
SID2010C
SID2K10C
Electrical Optical characteristics (Ta=25
°
C)
1.5
GaAs
Clear
Clear
I
F
=50mA
I
F
=50mA
1.7
3
0.4
1.0min
25.8min
3.5
±
0.1
(1.3)
0
±
0
0
Resin burr 0.3max
Resin heap 1.5max
3
±
0
Cathode
(
0
±
0
90
°
100%
60
°
30
°
0
°
90
°
60
°
30
°
0
50
50
100%
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SID2010C | 3phi Round Infrared LED |
| SID2K10C | 3phi Round Infrared LED |
| SIF912EDZ | ESD-protected bidirectional N-Ch. MOSFET for battery protection circuits |
| SIF912EDZ-T1-E3 | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| SII0680A | PCI to IDE/ATA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SID2010_08 | 制造商:SANKEN 制造商全稱:Sanken electric 功能描述:3phi Round Infrared LEDs |
| SID2010C | 制造商:SANKEN 制造商全稱:Sanken electric 功能描述:3phi Round Infrared LEDs |
| SID20N06-90I | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:N-Channel Enhancement MOSFET |
| SID220407 | 制造商:Amphenol PCD 功能描述:SID MODULE - Bulk |
| SID220410 | 制造商:Amphenol PCD 功能描述:SID MODULE - Bulk |
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