參數(shù)資料
型號: SI9945AEY
廠商: Vishay Intertechnology,Inc.
英文描述: Dual N-Channel 60-V (D-S), 175°C MOSFET
中文描述: 雙N通道60V(D-S)175℃MOSFET
文件頁數(shù): 2/4頁
文件大?。?/td> 59K
代理商: SI9945AEY
Si9945AEY
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
2-2
Document Number: 70758
S-57253—Rev. C, 24-Feb-98
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
1.0
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 60 V, V
GS
= 0 V
1
A
V
DS
= 60 V, V
GS
= 0 V, T
J
= 55 C
10
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
= 10 V
20
A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10 V, I
D
= 3.7 A
0.06
0.080
V
GS
= 4.5 V, I
D
= 3.4 A
0.075
0.100
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 3.7 A
11
S
Diode Forward Voltage
a
V
SD
I
S
= 2.0 A, V
GS
= 0 V
1.2
V
Dynamic
b
Total Gate Charge
Q
g
V
DS
= 30 V V
V
GS
= 10 V, I
D
= 3.7 A
10 V I
3 7 A
11
20
Gate-Source Charge
Q
gs
2
nC
Gate-Drain Charge
Q
gd
2
Turn-On Delay Time
t
d(on)
V
= 30 ,
= 30
1 A V
1 A, V
GEN
= 10 V, R
G
= 6
9
20
Rise Time
t
r
I
D
10 V R
10
20
Turn-Off Delay Time
t
d(off)
21
40
ns
Fall Time
t
f
8
20
Source-Drain Reverse Recovery Time
t
rr
I
F
= 2.0 A, di/dt = 100 A/ s
45
80
Notes
a.
b.
Pulse test; pulse width
300 s, duty cycle
2%.
Guaranteed by design, not subject to production testing.
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