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參數(shù)資料
| 型號： | SI9529DY |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Dual N- and P-Channel 2.5-V (G-S) Rated MOSFET |
| 中文描述： | 雙N和P -通道的2.5 V（GS）的額定MOSFET的 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 55K |
| 代理商： | SI9529DY |
Si9529DY
2
Siliconix
S-49520—Rev. D, 18-Dec-96
Specifications (T
J
= 25 C Unless Otherwise Noted)
Parameter
Symbol
Test Condition
Min
Typ
a
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
N-Ch
0.6
V
V
DS
= V
GS
, I
D
= –250 A
P-Ch
–0.6
Gate Body Leakage
Gate-Body Leakage
I
GSS
= 0 V V
V
DS
= 0 V, V
GS
=
8 V
N-Ch
100
nA
P-Ch
100
V
DS
= 20 V, V
GS
= 0 V
N-Ch
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= –12 V, V
GS
= 0 V
P-Ch
–1
A
V
DS
= 20 V, V
GS
= 0 V, T
J
= 55 C
N-Ch
5
V
DS
= –12 V, V
GS
= 0 V, T
J
= 55 C
P-Ch
–5
On State Drain Current
On-State Drain Current
b
I
D(on)
V
DS
5 V, V
GS
= 4.5 V
N-Ch
20
A
V
DS
–5 V, V
GS
= –4.5 V
P-Ch
–20
V
GS
= 4.5 V, I
D
= 6 A
N-Ch
0.023
0.03
Drain Source On State Resistance
Drain-Source On-State Resistance
b
r
DS(on)
V
GS
= –4.5 V, I
D
= –5 A
P-Ch
0.039
0.05
V
GS
= 2.5 V, I
D
= 5.2 A
N-Ch
0.028
V
GS
= –2.5 V, I
D
= –4.1 A
P-Ch
0.051
0.074
Forward Transconductance
b
g
fs
V
DS
= 10 V, I
D
= 6 A
N-Ch
24
S
V
DS
= –9 V, I
D
= –5 A
P-Ch
16
Diode Forward Voltage
b
V
SD
I
S
= 1.7 A, V
GS
= 0 V
N-Ch
0.75
1.2
V
I
S
= –1.7 A, V
GS
= 0 V
P-Ch
–0.75
–1.2
Dynamic
a
Total Gate Charge
Q
g
N-Ch
21
40
N-Channel
P-Ch
21
40
Gate Source Charge
Gate-Source Charge
Q
gs
V
DS
= 10 V,
V
GS
= 4.5 V, I
D
= 6 A
N-Ch
2.9
nC
P-Channel
V
DS
= –6 V V
V
GS
= –4.5 V, I
D
= –5A
4 5 V I
P-Ch
3
Gate Drain Charge
Gate-Drain Charge
Q
gd
N-Ch
6.5
P-Ch
6
Turn On Delay Time
Turn-On Delay Time
t
d(on)
N-Ch
30
60
N Ch
N-Channel
P-Ch
20
40
Rise Time
t
r
V
= 10 V, R
=
DD
1 A, V
GEN
= 4.5 V, R
G
= 6
N-Ch
70
140
L
I
D
P-Ch
40
80
Turn Off Delay Time
Turn-Off Delay Time
d( ff)
t
d(off)
P-Channel
10 V R
V
DD
= –10 V, R
L
= 10
–1 A, V
= –4.5 V, R
= 6
1 A, V
GEN
4.5 V, R
G
6
N-Ch
70
140
ns
I
D
P-Ch
100
200
Fall Time
t
f
N-Ch
30
60
P-Ch
60
120
Source Drain Reverse Recovery Time
Source-Drain Reverse Recovery Time
t
rr
I
F
= 1.7 A, di/dt = 100 A/ s
N-Ch
70
100
I
F
= –1.7 A, di/dt = 100 A/ s
P-Ch
67
100
Notes
a.
b.
Guaranteed by design, not subject to production testing.
Pulse test; pulse width
300 s, duty cycle
2%.
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