參數(shù)資料
型號: SI9529DY
廠商: Vishay Intertechnology,Inc.
英文描述: Dual N- and P-Channel 2.5-V (G-S) Rated MOSFET
中文描述: 雙N和P -通道的2.5 V(GS)的額定MOSFET的
文件頁數(shù): 1/7頁
文件大?。?/td> 55K
代理商: SI9529DY
Si9529DY
Siliconix
S-49520—Rev. D, 18-Dec-96
1
Dual N- and P-Channel 2.5-V (G-S) Rated MOSFET
Product Summary
V
DS
(V)
r
DS(on)
( )
I
D
(A)
N Channel
N-Channel
20
0.03 @ V
GS
= 4.5 V
@ V
GS
= 2.5 V
0.05 @ V
GS
= –4.5 V
0.074 @ V
GS
= –2.5 V
6
5.2
P Channel
P-Channel
–12
5
4.1
S
1
D
1
G
1
D
1
S
2
D
2
G
2
D
2
SO-8
5
6
7
8
Top View
2
3
4
1
N-Channel MOSFET
D
1
D
1
G
1
S
1
S
2
G
2
D
2
D
2
P-Channel MOSFET
Absolute Maximum Ratings (
T
A
= 25 C Unless Otherwise Noted
)
Parameter
Symbol
N-Channel
P-Channel
Unit
Drain-Source Voltage
V
DS
20
–12
V
Gate-Source Voltage
V
GS
8
8
Continuous Drain Current (T
J
= 150 C)
a
T
A
= 25 C
I
D
6
5
T
A
= 70 C
4.8
4.0
A
Pulsed Drain Current
I
DM
20
20
Continuous Source Current (Diode Conduction)
a
I
S
1.7
–1.7
Maximum Power Dissipation
a
T
A
= 25 C
P
D
2.0
W
T
A
= 70 C
1.3
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
Thermal Resistance Ratings
Parameter
Symbol
N- or P- Channel
Unit
Maximum Junction-to-Ambient
a
R
thJA
62.5
C/W
Notes
a.
Surface Mounted on FR4 Board, t
10 sec.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70161.
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