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參數(shù)資料
| 型號(hào)： | SI9435 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | GP RELAY |
| 中文描述： | P溝道MOSFET的邏輯電平的PowerTrench |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 68K |
| 代理商： | SI9435 |
Si9435BDY
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72245
S-32274—Rev. B, 03-Nov-03
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
a
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
=
250 A
1.0
3.0
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
30 V, V
GS
= 0 V
1
A
V
DS
=
30 V, V
GS
= 0 V, T
J
= 70 C
5
On State Drain Current
On-State Drain Current
b
I
D(on)
V
DS
10 V, V
GS
=
10 V
20
A
V
DS
5 V, V
GS
=
4.5 V
5
V
GS
=
10 V, I
D
=
5.7 A
V
GS
=
6
V, I
D
=
5 A
0.033
0.042
Drain-Source On-State Resistance
b
r
DS(on)
0.043
0.055
V
GS
=
4.5 V, I
D
=
4.4 A
0.056
0.070
Forward Transconductance
b
g
fs
V
DS
=
15 V, I
D
=
5.7 A
13
S
Diode Forward Voltage
b
V
SD
I
S
=
2.3 A, V
GS
= 0 V
0.8
1.1
V
Dynamic
a
Total Gate Charge
Q
g
16
24
Gate-Source Charge
Q
gs
V
DS
=
15 V,
V
GS
=
10 V, I
D
=
3.5 A
2.3
nC
Gate-Drain Charge
Q
gd
4.5
Gate Resistance
R
g
8.8
Turn-On Delay Time
t
d(on)
14
25
Rise Time
t
r
V
=
15 V, R
= 15
1 A, V
GEN
=
10 V, R
G
= 6
14
25
Turn-Off Delay Time
t
d(off)
I
D
42
70
ns
Fall Time
t
f
30
50
Source-Drain Reverse Recovery Time
t
rr
I
F
=
1.2 A, di/dt = 100 A/ s
30
60
Notes
a.
b.
Guaranteed by design, not subject to production testing.
Pulse test; pulse width
300 s, duty cycle
2%.
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| SI9435BDY | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET P-CH 30V 4.1A 8-Pin SOIC N 制造商:Vishay Siliconix 功能描述:MOSFET P SO-8 |
| SI9435BDY_05 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 30-V (D-S) MOSFET |
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| SI9435BDY-E3 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET P-CH 30V 4.1A 8-Pin SOIC N |
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