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參數(shù)資料
| 型號： | SI9435DY |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | P-Channel Logic Level PowerTrench MOSFET |
| 中文描述： | 5300 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 68K |
| 代理商： | SI9435DY |
FEATURES
TrenchFET Power MOSFET
Si9435BDY
Vishay Siliconix
New Product
Document Number: 72245
S-32274—Rev. B, 03-Nov-03
www.vishay.com
1
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.042 @ V
GS
=
10 V
5.7
30
0.055 @ V
GS
=
6 V
5.0
0.070 @ V
GS
=
4.5 V
4.4
S
D
S
D
S
D
G
D
SO-8
5
6
7
8
Top View
2
3
4
1
S
G
D
P-Channel MOSFET
Ordering Information:
Si9435BDY
Si9435BDY-T1 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
5.7
4.1
T
A
= 70 C
4.6
3.2
A
Pulsed Drain Current
I
DM
30
continuous Source Current (Diode Conduction)
a
I
S
2.3
1.1
Maximum Power Dissipation
a
T
A
= 25 C
P
D
2.5
1.3
W
T
A
= 70 C
1.6
0.8
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
40
50
Steady State
70
95
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
24
30
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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| SI9435DY-T1 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET P-CH 30V 5.1A 8-Pin SOIC N T/R |
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