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參數(shù)資料
| 型號： | SI9434DY |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel Enhancement-Mode MOSFET |
| 中文描述： | P通道增強型MOSFET |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 184K |
| 代理商： | SI9434DY |
SPICE Device Model Si9434BDY
Vishay Siliconix
www.vishay.com
2
Document Number: 73104
12-Aug-04
SPECIFICATIONS (T
J
= 25
°
C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Simulated
Data
Measured
Data
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
=
250
μ
A
0.80
V
On-State Drain Current
a
I
D(on)
V
DS
=
5 V, V
GS
=
4.5 V
156
A
V
GS
=
4.5 V, I
D
=
6.3 A
0.034
0.033
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
=
2.5 V, I
D
=
5.1 A
0.043
0.044
Forward Transconductance
a
g
fs
V
DS
=
5 V, I
D
=
6.3 A
15
10
S
Diode Forward Voltage
a
Dynamic
b
V
SD
I
S
=
2.6 A, V
GS
= 0 V
0.80
0.80
V
Total Gate Charge
Q
g
11.6
12
Gate-Source Charge
Q
gs
1.7
1.7
Gate-Drain Charge
Q
gd
V
DS
=
10 V, V
GS
=
4.5 V, I
D
=
6.3 A
3.5
3.5
nC
Turn-On Delay Time
t
d(on)
16
15
Rise Time
t
r
13
45
Turn-Off Delay Time
t
d(off)
83
80
Fall Time
t
f
V
DD
=
10 V, R
L
= 10
I
D
1 A, V
GEN
=
4.5 V, R
G
= 6
9
60
ns
Notes
a. Pulse test; pulse width
≤
300
μ
s, duty cycle
≤
2%.
b. Guaranteed by design, not subject to production testing.
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