- 您現(xiàn)在的位置：買(mǎi)賣IC網(wǎng) > PDF目錄368622 > Si9160BQ-T1-E3 (Vishay Intertechnology,Inc.) Controller for RF power amplifier boost PDF資料下載
參數(shù)資料
| 型號(hào)： | Si9160BQ-T1-E3 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Controller for RF power amplifier boost |
| 中文描述： | 控制器的射頻功率放大器提高 |
| 文件頁(yè)數(shù)： | 9/11頁(yè) |
| 文件大?。?/td> | 119K |
| 代理商： | SI9160BQ-T1-E3 |
Si9160
Vishay Siliconix
Document Number: 70029
S-40700—Rev. H, 19-Apr-04
www.vishay.com
9
Another benefit of powering from the output voltage is it
provides minimum load on the converter. This prevents the
converter from skipping frequency pulses typically referred to
as Burst or Pulse-Skipping modes. Pulse skipping mode could
be dangerous, especially if it generates noise in RF, IF, or
signal processing frequency bands.
Enable and Under Voltage Shutdown
The Si9160 is designed with programmable under-voltage
lockout and enable features. These features give designers
flexibility
to
customize
the
under-voltage lockout threshold is 1.2 V. With a simple resistor
divider from V
DD
, Si9160 can be programmed to turn-on at any
V
DD
voltage. The ENABLE pin, a TTL logic compatible input,
allows remote shutdown as needed.
converter
design.
The
Gate Drive and MOSFETs
The gate drive section is designed to drive the high-side
p-channel switch and low-side n-channel switch. The internal
40 ns break-before-make (BBM) timing prevents both
MOSFETs from turning-on simultaneously. The BBM circuit
monitors both drive voltages, once the gate-to-source voltage
drops below 2.5 V, the other gate drive is delayed 40-ns before
it is allowed to drive the external MOSFET (see Figure 2 for
timing diagram). This smart gate drive control provides
additional assurance that shoot-through current will not occur.
FIGURE 2.
Gate Drive Timing Diagrams
CH1
CH3
CH2
CH4
CH1: C
; CH2: D
S
CH3: COMP; CH4: D
R
The MOSFET used is the Si6801, an n- and p-channel in a
single package TSSOP-8. The Si6801 is optimized to have
very low gate charge and gate resistance. This results in a
great reduction in gate switching power losses. The average
time to switch on and off a MOSFET in a conventional structure
is about 20 ns. The Si6801 will switch on and off in < 5 ns, see
Figure 3.
N-Channel
Turn-Off
N-Channel
Turn-On
Note the Speed
These MOSFETs have switching speeds of <5 ns. This high speed is
due to the fast, high current output drive of the Si9160 and the opti-
mized gate charge of the Si6801.
FIGURE 3.
Gate Switching Times
5 ns/DIV, 2 V/DIV
5 ns/DIV, 2 V/DIV
Stability Components
A voltage mode boost converter is normally stabilized with
simple lag compensation due to the additional 90 phase lag
introduced by the additional right hand plane zero, as well as
having a duty factor dependent resonant frequency for the
output filter. The stability components shown in Figure 1 have
been chosen to ensure stability under all battery conditions
while maintaining maximum transient response. To do this we
have used a 2-pole-zero pair configuration (type 3 amplifier
configuration). Figure 4 shows the bode plot for the above
circuit, maintaining > 50 phase margin over the entire battery
voltage range.
FIGURE 4.
Stability, with 1-cell Li battery input, 5 V @ 600-mA
output.
Li Battery Volt-
age Full
Charge 4.0 V
10
0
10
1
10
2
10
4
10
5
10
6
Frequency (Hz)
Li Battery Voltage
Low Charge 2.7 V
G
P
10
3
+180
180
Phase
Gain
Phase Margin
> 50
0
50
+50
0
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SI9165 | High Frequency 600-mA Synchronous Buck/Boost Converter |
| SI9166 | High Frequency Programmable Topology Controller |
| SI9167 | High-Frequency, High-Efficiency Buck Converter Design For Multi-Cell Battery Configured Systems Using Si9167 |
| SI9177 | 200-mA PSM Step Down Converter with Bypass Capability |
| Si9177BH-TI | 200-mA PSM Step Down Converter with Bypass Capability |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI9160DB | 功能描述:電源管理IC開(kāi)發(fā)工具 SI9160 Demo Board RoHS:否 制造商:Maxim Integrated 產(chǎn)品:Evaluation Kits 類型:Battery Management 工具用于評(píng)估:MAX17710GB 輸入電壓: 輸出電壓:1.8 V |
| SI9161 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Optimized-Efficiency Controller for RF Power Amplifier Boost Converter |
| SI9161BQ-T1 | 功能描述:DC/DC 開(kāi)關(guān)控制器 Opt-Efficiency Cont RoHS:否 制造商:Texas Instruments 輸入電壓:6 V to 100 V 開(kāi)關(guān)頻率: 輸出電壓:1.215 V to 80 V 輸出電流:3.5 A 輸出端數(shù)量:1 最大工作溫度:+ 125 C 安裝風(fēng)格: 封裝 / 箱體:CPAK |
| SI9161BQ-T1-E3 | 功能描述:DC/DC 開(kāi)關(guān)控制器 Opt-Efficiency Cont For RF Power Amp RoHS:否 制造商:Texas Instruments 輸入電壓:6 V to 100 V 開(kāi)關(guān)頻率: 輸出電壓:1.215 V to 80 V 輸出電流:3.5 A 輸出端數(shù)量:1 最大工作溫度:+ 125 C 安裝風(fēng)格: 封裝 / 箱體:CPAK |
| SI9161DB | 功能描述:電源管理IC開(kāi)發(fā)工具 SI9161 Demo Board RoHS:否 制造商:Maxim Integrated 產(chǎn)品:Evaluation Kits 類型:Battery Management 工具用于評(píng)估:MAX17710GB 輸入電壓: 輸出電壓:1.8 V |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。