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參數(shù)資料
| 型號(hào)： | SI8902EDB |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | ESD-protected bidirectional N-Ch. MOSFET for battery protection circuits |
| 中文描述： | ESD保護(hù)雙向P溝道MOSFET，用于電池保護(hù)電路 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 58K |
| 代理商： | SI8902EDB |
FEATURES
TrenchFET Power MOSFET
Ultra-Low r
SS(on)
ESD Protected: 4000 V
New MICRO FOOT Chipscale Packaging Reduces
Footprint Area, Profile (0.65 mm) and On-Resistance
Per Footprint Area
APPLICATIONS
Battery Protection Circuit
-
1-2 Cell Li+/LiP Battery Pack for Portable Devices
Si8902EDB
Vishay Siliconix
New Product
Document Number: 71862
S-21337—Rev. C, 05-Aug-02
www.vishay.com
1
Bi-Directional N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V
S1S2
(V)
r
S1S2(on)
( )
I
S1S2
(A)
0.045 @ V
GS
= 4.5 V
5.0
0.048 @ V
GS
= 3.7 V
0.057 @ V
GS
= 2.5 V
0.072 @ V
GS
= 1.8 V
4.8
20
4.4
3.9
1
G
2
S
2
G
1
S
1
N-Channel
4 k
4 k
MICRO FOOT
Device Marking:
8902E = P/N Code
xxx = Date/Lot Traceability Code
S
2
S
2
Bump Side View
G
2
G
1
4
3
5
6
S
1
S
1
2
Backside View
8
x
Pin 1 Identifier
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Unit
Source1—Source2 Voltage
V
S1S2
20
Gate-Source Voltage
V
GS
12
V
T
A
= 25 C
5.0
3.9
Continuous Source1—Source2 Current
(T
J
= 150 C)
a
T
A
= 85 C
I
S1S2
3.4
2.8
A
Pulsed Source1—Source2 Current
I
SM
8
T
A
= 25 C
T
A
= 85 C
1.7
1
Maximum Power Dissipation
a
P
D
0.8
0.5
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
VPR
215
C
Package Reflow Conditions
c
IR/Convection
220
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t
5 sec
60
75
Maximum Junction-to-Ambient
a
Steady State
R
thJA
95
120
C/W
Maximum Junction-to-Foot
b
Steady State
R
thJF
18
22
Notes
a.
b.
c.
Surface Mounted on 1” x 1” FR4 Board.
The Foot is defined as the top surface of the package.
Refer to IPC/JEDEC (J-STD-020A), no manual or hand soldering.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI8902EDB_06 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Bi-Directional N-Channel 20-V (D-S) MOSFET |
| SI8902EDB_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Bi-Directional N-Channel 20-V (D-S) MOSFET |
| SI8902EDB-T2 | 功能描述:MOSFET 20V 7.0A 1.8W Bi-Directional RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI8902EDB-T2-E1 | 功能描述:MOSFET 20V 5.0A 1.7W 45mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI8902EDB-T2-E3 | 制造商:Vishay Siliconix 功能描述:TRANS MOSFET N-CH 20V 3.9A 6PIN MICRO FOOT - Tape and Reel |
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