參數(shù)資料
型號: SI8904EDB
廠商: Vishay Intertechnology,Inc.
英文描述: ESD-protected bidirectional N-Ch. MOSFET for battery protection circuits
中文描述: ESD保護雙向P溝道MOSFET,用于電池保護電路
文件頁數(shù): 1/3頁
文件大?。?/td> 181K
代理商: SI8904EDB
Vishay Siliconix
SPICE Device Model Si8904EDB
Bi-Directional N-Channel 30-V (D-S) MOSFET
CHARACTERISTICS
N-Channel Vertical DMOS
Macro Model (Subcircuit Model)
Level 3 MOS
Apply for both Linear and Switching Application
Accurate over the
55 to 125
°
C Temperature Range
Model the Gate Charge, Transient, and Diode Reverse Recovery
Characteristics
DESCRIPTION
The attached spice model describes the typical electrical
characteristics of the n-channel vertical DMOS. The subcircuit
model is extracted and optimized over the
55 to 125
°
C
temperature ranges under the pulsed 0-V to 5-V gate drive. The
saturated output impedance is best fit at the gate bias near the
threshold voltage.
A novel gate-to-drain feedback capacitance network is used to model
the gate charge characteristics while avoiding convergence difficulties
of the switched C
gd
model. All model parameter values are optimized
to provide a best fit to the measured electrical data and are not
intended as an exact physical interpretation of the device.
SUBCIRCUIT MODEL SCHEMATIC
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate
data sheet of the same number for guaranteed specification limits.
S-60075
Rev. B, 23-Jan-05
1
www.vishay.com
Document Number: 72971
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