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參數(shù)資料
| 型號(hào)： | SI7913DN |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | Dual P-Channel 20-V (D-S) MOSFET |
| 中文描述： | 雙P溝道20 - V（下局副局長(zhǎng)）MOSFET的 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 67K |
| 代理商： | SI7913DN |
Si7913DN
Vishay Siliconix
www.vishay.com
2
Document Number: 72615
S-51129—Rev. B, 13-Jun-05
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
=
250 A
0.40
1.0
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
8
V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
20 V, V
GS
= 0 V
1
A
V
DS
=
20 V, V
GS
= 0 V, T
J
= 85 C
5
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
=
4.5 V
20
A
V
GS
=
4.5 V, I
D
=
7.4 A
0.029
0.037
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
=
2.5 V, I
D
=
6.5 A
0.038
0.048
V
GS
=
1.8 V, I
D
=
1.5 A
0.051
0.066
Forward Transconductance
a
g
fs
V
DS
=
6
V, I
D
=
7.4 A
20
S
Diode Forward Voltage
a
V
SD
I
S
=
2.3 A, V
GS
= 0 V
0.74
1.2
V
Dynamic
b
Total Gate Charge
Q
g
15.3
24
Gate-Source Charge
Q
gs
V
DS
=
10 V,
V
GS
=
4.5 V, I
D
=
7.4 A
2.0
nC
Gate-Drain Charge
Q
gd
3.9
Gate Resistance
R
g
f = 1 MHz
7
Turn-On Delay Time
t
d(on)
20
30
Rise Time
t
r
V
=
10 V, R
= 10
1 A, V
GEN
=
4.5 V, R
g
= 6
70
110
Turn-Off Delay Time
t
d(off)
I
D
72
110
ns
Fall Time
t
f
150
225
Source-Drain Reverse Recovery Time
t
rr
I
F
=
2.3 A, di/dt = 100 A/ s
25
50
Notes
a.
b.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
4
8
12
16
20
0.0
0.5
1.0
1.5
2.0
2.5
0
4
8
12
16
20
0
1
2
3
4
V
GS
= 5 thru 2.5 V
25 C
T
C
= 125 C
1 V
55 C
1.5 V
Output Characteristics
Transfer Characteristics
V
DS
Drain-to-Source Voltage (V)
I
D
V
GS
Gate-to-Source Voltage (V)
I
D
2 V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI7913DN_06 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual P-Channel 20-V (D-S) MOSFET |
| SI7913DN-T1-E3 | 功能描述:MOSFET DUAL P-CH 20V (D-S) RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7913DN-T1-E3/BKN | 制造商:Vishay Siliconix 功能描述:DUAL P-CHANNEL 20-V (D-S) MOSFET |
| SI7913DN-T1-GE3 | 功能描述:MOSFET Dual P-Ch 20V 37mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7915 | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:3-Terminal Negative Voltage Regulator |
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