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參數(shù)資料
| 型號： | SI7872DP |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| 中文描述： | 雙N溝道30 V的（副）MOSFET的肖特基二極管 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大小： | 68K |
| 代理商： | SI7872DP |
Si7872DP
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72035
S-21978
—
Rev. A, 04-Nov-02
MOSFET SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED).
Parameter
Symbol
Test Condition
Min
Typ
a
Max
Unit
Static
Ch-1
1.0
3.0
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
0.8
2.0
100
100
1
100
15
2000
V
V
DS
= 0 V, V
GS
=
V
DS
= 0 V, V
GS
=
20 V
12 V
Gate-Body Leakage
I
GSS
nA
V
DS
= 24 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
A
V
DS
= 24 V, V
GS
= 0 V, T
J
= 85 C
20
20
On-State Drain Current
b
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
A
0.017
0.016
0.024
0.020
19
21
0.75
0.47
0.022
0.022
0.030
0.028
V
GS
= 10 V, I
D
= 7.5 A
Drain-Source On-State Resistance
b
r
DS(on)
V
GS
= 4.5 V, I
D
= 6.5 A
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 7.5 A
S
1.2
0.5
Diode Forward Voltage
b
V
SD
I
S
= 1 A, V
GS
= 0 V
V
Dynamic
a
Ch-1
7
11
Total Gate Charge
Q
g
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
11.5
2.9
3.8
2.5
3.5
1.5
18
Gate-Source Charge
Q
gs
V
DS
= 15 V,
V
GS
= 4.5 V, I
D
= 7.5 A
nC
Gate-Drain Charge
Q
gd
Gate Resistance
R
G
Ch-2
1.8
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
9
12
10
10
19
40
9
9
35
28
15
20
17
17
30
66
15
15
55
45
Turn-On Delay Time
t
d(on)
Rise Time
t
r
V
= 15 V, R
= 15
1 A, V
GEN
= 10 V, R
G
= 6
I
D
Turn-Off Delay Time
t
d(off)
ns
Fall Time
t
f
Source-Drain Reverse Recovery Time
t
rr
I
F
= 1.7 A, di/dt = 100 A/ s
Notes
a.
b.
Guaranteed by design, not subject to production testing.
Pulse test; pulse width
300 s, duty cycle
2%.
SCHOTTKY SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
I
F
= 1.0 A
0.47
0.50
Forward Voltage Drop
V
F
I
F
= 1.0 A, T
J
= 125 C
V
r
= 30 V
V
r
= 30 V, T
J
= 100 C
V
r
= -30 V, T
J
= 125 C
V
r
= 10 V
0.36
0.004
0.7
3.0
0.42
0.100
10
20
V
Maximum Reverse Leakage Current
I
rm
mA
Junction Capacitance
C
T
50
pF
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