參數(shù)資料
型號: Si786
廠商: Vishay Intertechnology,Inc.
英文描述: Dual-Output Power-Supply Controller(用于便攜電腦電源轉(zhuǎn)換的雙輸出步降轉(zhuǎn)換器)
中文描述: 雙輸出電源控制器(用于便攜電腦電源轉(zhuǎn)換的雙輸出步降轉(zhuǎn)換器)
文件頁數(shù): 10/13頁
文件大?。?/td> 497K
代理商: SI786
Si786
Vishay Siliconix
S-60752—Rev. G, 05-Apr-99
10
FaxBack 408-970-5600, request 70189
www.siliconix.com
FIGURE 3.
Si786 Controller Block Diagram
Soft-Start
To slowly bring up the 3.3-V and 5-V supplies, connect
capacitors from SS
3
and SS
5
to GND. Asserting ON
3
or ON
5
starts a 4-μA constant current source to charge these
capacitors to 4 V. As the voltage on these pins ramps up, so
does the current limit comparator threshold, to increase the
duty cycle of the MOSFETs to their maximum level. If ON
3
or
ON
5
are left low, the respective capacitor is discharged to
GND. Leaving the SS
3
or SS
5
pins open will cause either
controller to reach the terminal over-current level within 10 μs.
Soft start helps prevent current spikes at turn-on and allows
separate
supplies
to
be
programmability.
delayed
using
external
Synchronous Rectifiers
Synchronous rectification replaces the Schottky rectifier with a
MOSFET, which can be controlled to increase the efficiency of
the circuit.
When the high-side MOSFET is switched off, the inductor will
try to maintain its current flow, inverting the inductor’s polarity.
相關(guān)PDF資料
PDF描述
SI7872DP Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
SI7882DP N-Channel Reduced Qg, Fast Switching MOSFET
Si7888DP Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
SI7892DP Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
Si7892DP-T1 Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI7860ADP 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel Reduced, Fast Switching MOSFET
SI7860ADP-T1-E3 功能描述:MOSFET 30V 16A 4.8W 9.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI7860ADP-T1-GE3 功能描述:MOSFET 30V 16A 4.8W 9.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI7860DP 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel Reduced Qg, Fast Switching MOSFET
SI7860DP-E3 功能描述:MOSFET N-Ch 30V 18A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube