- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄368619 > Si7866DP (Vishay Intertechnology,Inc.) N-Channel 20-V (D-S) MOSFET PDF資料下載
參數(shù)資料
| 型號： | Si7866DP |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 20-V (D-S) MOSFET |
| 中文描述： | N溝道20 - V（下局副局長）MOSFET的 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 43K |
| 代理商： | SI7866DP |
Si7866DP
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 71848
S-21412
—
Rev. B, 05-Aug-02
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
0.8
2.1
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
V
DS
= 16 V, V
GS
= 0 V
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 16 V, V
GS
= 0 V, T
J
= 55 C
5 V, V
GS
= 10
V
5
A
On-State Drain Current
a
I
D(on)
V
DS
30
A
V
GS
= 10
V, I
D
= 29 A
0.0020
0.0025
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 4.5 V, I
D
= 25 A
0.0026
0.00375
Forward Transconductance
a
g
fs
V
DS
= 6 V, I
D
= 29 A
95
S
Diode Forward Voltage
a
V
SD
I
S
= 4.5 A, V
GS
= 0 V
0.68
1.1
V
Dynamic
b
Total Gate Charge
Q
g
40
60
Gate-Source Charge
Q
gs
V
DS
= 10 V,
V
GS
= 4.5 V, I
D
= 29 A
15
nC
Gate-Drain Charge
Q
gd
11
Gate Resistance
R
g
1.2
Turn-On Delay Time
t
d(on)
70
100
Rise Time
t
r
V
= 10 V, R
= 10
1 A, V
GEN
= 4.5 V, R
G
= 6
60
90
Turn-Off Delay Time
t
d(off)
I
D
105
160
ns
Fall Time
t
f
55
85
Source-Drain Reverse Recovery Time
t
rr
I
F
= 2.9 A, di/dt = 100 A/ s
65
100
Notes
a.
b.
Pulse test; pulse width
300 s, duty cycle
2%.
Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
10
20
30
40
50
60
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
10
20
30
40
50
60
0
1
2
3
4
5
V
GS
= 10 thru 3 V
25 C
T
C
= 125 C
-55 C
Output Characteristics
Transfer Characteristics
V
DS
- Drain-to-Source Voltage (V)
-
I
D
V
GS
- Gate-to-Source Voltage (V)
-
I
D
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SI7868ADP | Si7868ADP vs. Si7868DP Specification Comparison |
| SI7868DP | N-Channel 20-V (D-S) MOSFET |
| Si786 | Dual-Output Power-Supply Controller(用于便攜電腦電源轉(zhuǎn)換的雙輸出步降轉(zhuǎn)換器) |
| SI7872DP | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| SI7882DP | N-Channel Reduced Qg, Fast Switching MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI7866DP-T1 | 功能描述:MOSFET 20V 29A 5.4W 2.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7868ADP | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Si7868ADP vs. Si7868DP Specification Comparison |
| SI7868ADP-T1-E3 | 功能描述:MOSFET 20V 40A 83W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7868ADP-T1-GE3 | 功能描述:MOSFET 20V 40A 83W 2.25mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7868DP | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Si7868ADP vs. Si7868DP Specification Comparison |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。