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參數(shù)資料
| 型號： | SI7858DP |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 12-V (D-S) MOSFET |
| 中文描述： | N溝道12 V的（副）MOSFET的 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 204K |
| 代理商： | SI7858DP |
SPICE Device Model Si7858DP
Vishay Siliconix
www.vishay.com
2
Document Number: 71024
20-May-02
SPECIFICATIONS (T
J
= 25
°
C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Simulated
Data
Measured
Data
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
0.91
V
On-State Drain Current
a
I
D(on)
V
DS
≥
5V, V
GS
= 4.5V
1265
A
V
GS
= 4.5V, I
D
= 25A
0.0019
0.0024
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 2.5V, I
D
=20A
0.0031
0.0031
Forward Transconductance
a
g
fs
V
DS
= 6V, I
D
= 25A
142
130
S
Diode Forward Voltage
a
Dynamic
b
V
SD
I
S
= 2.9A, V
GS
= 0V
0.76
0.75
V
Total Gate Charge
Q
g
42
40
Gate-Source Charge
Q
gs
6.7
6.7
Gate-Drain Charge
Q
gd
V
DS
= 6V, V
GS
= 4.5V, I
D
= 25A
9.2
9.2
nC
Turn-On Delay Time
t
d(on)
41
40
Rise Time
t
r
58
40
Turn-Off Delay Time
t
d(off)
66
140
Fall Time
t
f
V
DD
= 6V, R
L
= 6
I
D
1A, V
GEN
= 4.5V, R
G
= 6
118
70
Source-Drain Reverse Recovery Time
t
rr
I
F
= 2.9A, di/dt = 100 A/
μ
s
39
50
ns
Notes
a. Pulse test; pulse width
≤
300
μ
s, duty cycle
≤
2%.
b. Guaranteed by design, not subject to production testing.
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| SI7860ADP-T1-E3 | 功能描述:MOSFET 30V 16A 4.8W 9.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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