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參數(shù)資料
| 型號： | SI7454DP |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 30V的N溝道的PowerTrench MOSFET的 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 48K |
| 代理商： | SI7454DP |
TrenchFET Power MOSFETS
New Low Thermal Resistance PowerPAK
Package with Low 1.07-mm Profile
PWM Optimized for Fast Switching
Primary Side Switch for High Density DC/DC
Telecom/Server 48-V, Full-/Half-Bridge DC/DC
Industrial and 42-V Automotive
Si7454DP
Vishay Siliconix
New Product
Document Number: 71618
S-03708—Rev. A, 14-May-01
www.vishay.com
1
N-Channel 100-V (D-S) MOSFET
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.034 @ V
GS
= 10 V
0.040 @ V
GS
= 6.0 V
7.8
100
7.2
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
6.15 mm
5.15 mm
PowerPAK SO-8
Bottom View
N-Channel MOSFET
G
D
S
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
100
Gate-Source Voltage
V
GS
20
V
T
A
= 25 C
7.8
5.0
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 85 C
I
D
5.7
3.6
Pulsed Drain Current
I
DM
30
A
Avalanche Current
I
AS
25
Single Avalanche Energy (Duty Cycle
1%)
L = 0.1 mH
E
AS
31
mJ
Continuous Source Current (Diode Conduction)
a
I
S
4.0
1.6
A
T
A
= 25 C
4.8
1.9
Maximum Power Dissipation
a
T
A
= 85 C
P
D
2.6
1.0
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
Parameter
Symbol
Typical
Maximum
Unit
t
10 sec
21
26
Maximum Junction-to-Ambient
a
Steady State
R
thJA
55
65
C/W
Maximum Junction-to-Case (Drain)
Steady State
R
thJC
1.6
2
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI7454DP_06 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 100-V (D-S) MOSFET |
| SI7454DP-T1 | 功能描述:MOSFET 100V 7.8A 4.8W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7454DP-T1-E3 | 功能描述:MOSFET 100V 7.8A 4.8W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7454DP-T1-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
| SI7454DP-T1-GE3 | 功能描述:MOSFET 100V 7.8A 4.8W 34mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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