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參數(shù)資料
| 型號： | SI742DN |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | P-Channel 30-V (D-S) MOSFET |
| 中文描述： | P溝道30V的MOSFET |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 70K |
| 代理商： | SI742DN |
FEATURES
TrenchFET Power MOSFET
New PowerPAK Package
Low Thermal Resistance, R
thJC
Low 1.07-mm Profile
APPLICATIONS
Battery Switch
Si7421DN
Vishay Siliconix
New Product
Document Number: 72416
S-32411—Rev. B, 24-Nov-03
www.vishay.com
1
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
30
0.025 @ V
GS
=
10 V
9.8
0.043 @ V
GS
=
4.5 V
7.4
P-Channel MOSFET
G
D
S
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
3.30 mm
3.30 mm
PowerPAK 1212-8
Bottom View
Ordering Information: Si7421DN-T1—E3
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
9.8
6.4
T
A
= 85 C
7
4.6
A
Pulsed Drain Current
I
DM
30
continuous Source Current (Diode Conduction)
a
I
S
3
1.3
Maximum Power Dissipation
a
T
A
= 25 C
P
D
3.6
1.5
W
T
A
= 85 C
1.9
0.8
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
28
35
Steady State
65
81
C/W
Maximum Junction-to-Case
Steady State
R
thJC
2.9
3.8
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI7430DP | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 150-V (D-S) WFET |
| SI7430DP_07 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 150-V (D-S) MOSFET |
| SI7430DP_13 | 制造商:VAISH 制造商全稱:VAISH 功能描述:N-Channel 150 V (D-S) MOSFET |
| SI7430DP-T1-E3 | 功能描述:MOSFET 150V 26A 64W 45mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7430DP-T1-GE3 | 功能描述:MOSFET 150V 26A 64W 45mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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