參數(shù)資料
型號： SI733ADP
廠商： Vishay Intertechnology,Inc.
元件分類： MOSFETs
英文描述： Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
中文描述： 雙N溝道30 V的（副）MOSFET的肖特基二極管
文件頁數(shù)： 1/5頁
文件大小： 61K
代理商： SI733ADP
FEATURES
Ultra-Low On-Resistance Using High Density
TrenchFET Gen II Power MOSFET Technology
Q
g
Optimized
New Low Thermal Resistance PowerPAK Package
with Low 1.07-mm Profile
100% R
g
Tested
APPLICATIONS
Low-Side DC/DC Conversion
Notebook
Server
Workstation
Synchronous Rectifier, POL
Si7336ADP
Vishay Siliconix
New Product
Document Number: 73152
S-41958—Rev. A, 25-Oct-04
www.vishay.com
1
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
Q
g
(Typ)
30
0.0030 @ V
GS
= 10 V
0.0040 @ V
GS
= 4.5 V
30
36
27
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
6.15 mm
5.15 mm
PowerPAK SO-8
Bottom View
Ordering Information:
Si7336ADP-T1
Si7336ADP-T1—E3 (Lead (Pb)-Free)
N-Channel MOSFET
G
D
S
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
30
18
T
A
= 70 C
25
15
Pulsed Drain Current (10 s Pulse Width)
I
DM
70
A
Continuous Source Current (Diode Conduction)
a
I
S
4.5
1.8
Avalanche Current
L = 1.0 mH
I
AS
50
Maximum Power Dissipation
a
T
A
= 25 C
P
D
5.4
1.9
W
T
A
= 70 C
3.4
1.2
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
18
23
Steady State
50
65
C/W
Maximum Junction-to-Case (Drain)
Steady State
R
thJC
1.0
1.5
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
相關(guān)PDF資料
PDF描述
Si7344DP Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 538-0064-7 00; No. of Positions: 25; Connector Type: Wire; Contact Gender: Female; Contact Spacing (mm): 1.25; Terminal Pitch (mm): 1.25; Current Rating(Amps)(Max.): 1; Operating Temperature Range (degrees C): -35 to 85; General Description: Housing; Single row; Crimping
SI7356DP Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
SI7356DP-T1 Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
SI7358ADP Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
SI7358DP Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI7342DP-T1-E3 功能描述:MOSFET 30V 15A 5.0W 8.25mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI7342DP-T1-GE3 功能描述:MOSFET N-CH D-S 30V PPAK 8SOIC RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:TrenchFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
SI7344DP 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 20-V (D-S) MOSFET
SI7344DP-T1-E3 功能描述:MOSFET 20V 17A 4.1W 8.0mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI7348DP 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 20-V (D-S) MOSFET
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*