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參數(shù)資料
| 型號(hào)： | SI6911DQT-1 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Dual P-Channel 12-V (D-S) MOSFET |
| 中文描述： | 雙P溝道12 V的（副）MOSFET的 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 43K |
| 代理商： | SI6911DQT-1 |
Si6911DQ
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72231
S-31064—Rev. A, 26-May-03
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= -300 A
-0.4
-0.9
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
8 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -9.6 V, V
GS
= 0 V
-1
A
V
DS
= -9.6 V, V
GS
= 0 V, T
J
= 70 C
-25
On-State Drain Current
a
I
D(on)
V
DS
= -5 V, V
GS
= -4.5 V
-20
A
V
GS
= -4.5 V, I
D
= -5.1 A
V
GS
= -2.5 V, I
D
= -4.5
A
0.021
0.026
Drain-Source On-State Resistance
a
r
DS(on)
0.028
0.035
V
GS
= -1.8 V, I
D
= -3.9
A
0.037
0.046
Forward Transconductance
a
g
fs
V
DS
= -5 V, I
D
= -5.1 A
20
S
Diode Forward Voltage
a
V
SD
I
S
= -1.0 A, V
GS
= 0 V
-0.65
-1.1
V
Dynamic
b
Total Gate Charge
Q
g
16
24
Gate-Source Charge
Q
gs
V
DS
= -6 V,
V
GS
= -4.5 V, I
D
= -5.1 A
1.9
nC
Gate-Drain Charge
Q
gd
3.9
Turn-On Delay Time
t
d(on)
35
55
Rise Time
t
r
V
= -6 V, R
= 6
-1 A, V
GEN
= -4.5 V, R
G
= 6
62
100
Turn-Off Delay Time
t
d(off)
I
D
120
180
ns
Fall Time
t
f
70
110
Source-Drain Reverse Recovery Time
t
rr
I
F
= -1.0 A, di/dt = 100 A/ s
65
100
Notes
a.
b.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
6
12
18
24
30
0.0
0.5
1.0
1.5
2.0
2.5
0
6
12
18
24
30
0
1
2
3
4
5
V
GS
= 5 thru 2.5 V
T
C
= -55 C
125 C
25 C
Output Characteristics
Transfer Characteristics
V
DS
- Drain-to-Source Voltage (V)
-
I
D
V
GS
- Gate-to-Source Voltage (V)
-
I
D
2 V
1.5 V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI6913DQ | 制造商:VISHAY 制造商全稱(chēng):Vishay Siliconix 功能描述:Dual P-Channel 12-V (D-S) MOSFET |
| SI6913DQ_04 | 制造商:VISHAY 制造商全稱(chēng):Vishay Siliconix 功能描述:Dual P-Channel 12-V (D-S) MOSFET |
| SI6913DQ-T1 | 制造商:VISHAY 制造商全稱(chēng):Vishay Siliconix 功能描述:Dual P-Channel 12-V (D-S) MOSFET |
| SI6913DQ-T1-E3 | 功能描述:MOSFET DUAL P-CH 12V (D-S) RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI6913DQ-T1-GE3 | 功能描述:MOSFET 12V 5.8A 1.14W 21mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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