參數(shù)資料
型號: SI6443DQ
廠商: Vishay Intertechnology,Inc.
元件分類: MOSFETs
英文描述: P-Channel 30-V (D-S) MOSFET
中文描述: P溝道30V的MOSFET
文件頁數(shù): 1/5頁
文件大?。?/td> 42K
代理商: SI6443DQ
FEATURES
TrenchFET Power MOSFET
APPLICATIONS
Battery Switch
Load Switch
Si6443DQ
Vishay Siliconix
New Product
Document Number: 72083
S-22385—Rev. A, 30-Dec-02
www.vishay.com
1
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.012 @ V
GS
= -10 V
-8.8
-30
0.019 @ V
GS
= -4.5 V
- 7.0
Si6443DQ
D
S
S
G
1
2
3
4
8
7
6
5
D
S
S
D
TSSOP-8
Top View
S*
G
D
P-Channel MOSFET
* Source Pins 2, 3, 6 and 7
must be tied common.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
-30
Gate-Source Voltage
V
GS
20
V
T
A
= 25 C
- 8.8
-7.3
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 70 C
I
D
-7.2
-5.9
Pulsed Drain Current (10 s Pulse Width)
I
DM
-30
A
Continuous Source Current (Diode Conduction)
a
I
S
-1.35
-0.95
T
A
= 25 C
1.50
1.05
Maximum Power Dissipation
a
T
A
= 70 C
P
D
1.0
0.67
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t
10 sec
60
83
Maximum Junction-to-Ambient
a
Steady State
R
thJA
100
120
C/W
Maximum Junction-to-Foot
Steady State
R
thJF
35
45
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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