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參數(shù)資料
| 型號： | SI5441DC |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel 2.5-V (G-S) MOSFET |
| 中文描述： | P通道的2.5 V（GS）的MOSFET的 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 66K |
| 代理商： | SI5441DC |
FEATURES
TrenchFET Power MOSFET
2.5-V Rated
Pb-free
Available
Si5441DC
Vishay Siliconix
Document Number: 71055
S-50366—Rev. C, 28-Feb-05
www.vishay.com
1
P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
Q
g
(Typ)
0.055 @ V
GS
=
4.5 V
5.3
20
0.06 @ V
GS
=
3.6 V
5.1
11
0.083 @ V
GS
=
2.5 V
4.3
1206-8 ChipFE
T
D
D
D
G
D
D
D
S
1
Bottom View
Marking Code
BA
XX
Lot Traceability
and Date Code
Part # Code
S
G
D
P-Channel MOSFET
Ordering Information:
Si5441DC
Si5441DC-T1—E3 (Lead (Pb)-Free)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Unit
Drain-Source Voltage
V
DS
20
V
Gate-Source Voltage
V
GS
12
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
5.3
3.9
T
A
= 85 C
3.8
2.8
A
Pulsed Drain Current
Continuous Source Current
a
I
DM
I
S
20
2.1
1.1
Maximum Power Dissipation
a
T
A
= 25 C
T
A
= 85 C
P
D
2.5
1.3
W
1.3
0.7
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
b, c
T
J
, T
stg
55 to 150
C
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
5 sec
R
thJA
40
50
Steady State
80
95
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
15
20
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercon-
nection.
Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
c.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SI5441DC-T1 | 功能描述:MOSFET 20V 5.3A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI5441DC-T1-E3 | 功能描述:MOSFET 20V 5.3A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI5441DC-T1-GE3 | 功能描述:MOSFET 20V 5.3A 2.5W 55mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI5442DU-T1-GE3 | 功能描述:MOSFET 20V 10mOhm@4.5V 25A N-Ch RoHS:否 制造商:Vishay Semiconductors 晶體管極性:N-Channel 汲極/源極擊穿電壓:20 V 閘/源擊穿電壓:+/- 8V 漏極連續(xù)電流:25 A 電阻汲極/源極 RDS（導通）:10 mOhms 配置:Single 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:PowerPAK ChipFET-8 Single 封裝:Reel |
| SI5443DC | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 2.5-V (G-S) MOSFET |
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