Si5319
Rev. 1.0
7
2-Level LVCMOS Input Pins
Input Voltage Low
VIL
VDD =1.71V
—
0.5
V
VDD =2.25V
—
0.7
V
VDD =2.97V
—
0.8
V
Input Voltage High
VIH
VDD =1.89V
1.4
—
V
VDD =2.25 V
1.8
—
V
VDD =3.63V
2.5
—
V
Input Voltage Low
VILL
—
0.15 x VDD
V
Input Voltage Mid
VIMM
0.45 x
VDD
—0.55 x VDD
V
Input Voltage High
VIHH
0.85 x
VDD
——
V
Input Low Current
IILL
–20
—
A
Input Mid Current
IIMM
–2
—
+2
A
Input High Current
IIHH
—
20
A
LVCMOS Output Pins
Output Voltage Low
VOL
IO = 2 mA
VDD =1.71V
——
0.4
V
Output Voltage Low
IO = 2 mA
VDD =2.97V
——
0.4
V
Table 2. DC Characteristics (Continued)
(VDD = 1.8 ± 5%, 2.5 ±10%, or 3.3 V ±10%, TA = –40 to 85 °C)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Notes:
1.
Current draw is independent of supply voltage.
2.
No under- or overshoot is allowed.
3.
LVPECL outputs require nominal VDD ≥ 2.5 V.
4.
This is the amount of leakage that the 3-level inputs can tolerate from an external driver. See Si53xx Family
Reference Manual for more details.
5.
LVPECL, CML, LVDS and low-swing LVDS measured with Fo = 622.08 MHz.