參數(shù)資料
型號: SI4980DY
廠商: Vishay Intertechnology,Inc.
英文描述: Dual N-Channel 80-V (D-S) MOSFET
中文描述: 雙N溝道80 - V(下局副局長)MOSFET的
文件頁數(shù): 1/4頁
文件大?。?/td> 39K
代理商: SI4980DY
Si4980DY
Vishay Siliconix
Document Number: 70646
S-03950—Rev. D, 26-May-03
www.vishay.com
2-1
Dual N-Channel 80-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
80
0.075 @ V
GS
= 10 V
3.7
0.095 @ V
GS
= 6.0 V
3.2
SO-8
S
1
D
1
G
1
D
1
S
2
D
2
G
2
D
2
5
6
7
8
Top View
2
3
4
1
D
G
S
N-Channel MOSFET
Ordering Information:
Si4980DY
Si4980DY-T1 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
80
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
3.7
T
A
= 70 C
2.9
A
Pulsed Drain Current
I
DM
30
Continuous Source Current (Diode Conduction)
a
I
S
1.7
Maximum Power Dissipation
a
T
A
= 25 C
P
D
2.0
W
T
A
= 70 C
1.3
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
Maximum Junction-to-Ambient
a
R
thJA
62.5
C/W
Notes
a.
Surface Mounted on FR4 Board, t
10 sec.
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