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參數(shù)資料
| 型號(hào)： | SI4925 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Dual P-Channel, Logic Level, PowerTrench MOSFET |
| 中文描述： | 雙P溝道，邏輯層次，的PowerTrench MOSFET的 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大小： | 65K |
| 代理商： | SI4925 |
Si4925BDY
Vishay Siliconix
www.vishay.com
2
Document Number: 72001
S-31989—Rev. B, 13-Oct-03
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= -250 A
-1
-3
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20
V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -30 V, V
GS
= 0 V
-1
A
V
DS
= -30 V, V
GS
= 0 V, T
J
= 55 C
-25
On-State Drain Current
a
I
D(on)
V
DS
= -5 V, V
GS
= -10 V
-40
A
Drain Source On State Resistance
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= -10 V, I
D
= -7.1 A
0.020
0.025
V
GS
= -4.5 V, I
D
= -5.5 A
0.033
0.041
Forward Transconductance
a
g
fs
V
DS
= -10
V, I
D
= -7.1 A
20
S
Diode Forward Voltage
a
V
SD
I
S
= -1.7 A, V
GS
= 0 V
-0.8
-1.2
V
Dynamic
b
Total Gate Charge
Q
g
33
50
Gate-Source Charge
Q
gs
V
DS
= -15 V,
V
GS
= -10 V, I
D
= -7.1 A
5.4
nC
Gate-Drain Charge
Q
gd
8.9
Turn-On Delay Time
t
d(on)
9
15
Rise Time
t
r
V
= -15 V, R
= 15
-1 A, V
GEN
= -10 V, R
G
= 6
12
20
Turn-Off Delay Time
t
d(off)
I
D
60
90
ns
Fall Time
t
f
34
50
Source-Drain Reverse Recovery Time
t
rr
I
F
= -1.7 A, di/dt = 100 A/ s
30
60
Notes
a.
b.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
10
20
30
40
0
1
2
3
4
5
0
10
20
30
40
0
1
2
3
4
5
V
GS
= 10 thru 5 V
T
C
= -55 C
125 C
4 V
25 C
Output Characteristics
Transfer Characteristics
V
DS
- Drain-to-Source Voltage (V)
-
I
D
V
GS
- Gate-to-Source Voltage (V)
-
I
D
3, 2 V
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