- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄365549 > SI4562DY (Vishay Intertechnology,Inc.) N- and P-Channel 2.5-V (G-S) MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | SI4562DY |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N- and P-Channel 2.5-V (G-S) MOSFET |
| 中文描述： | N和P通道2.5V（G-S）MOSFET |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 74K |
| 代理商： | SI4562DY |
Si4562DY
Vishay Siliconix
Document Number: 70717
S-54940—Rev. A, 29-Sep-97
www.vishay.com FaxBack 408-970-5600
2-1
N- and P-Channel 2.5-V (G-S) MOSFET
V
DS
(V)
r
DS(on)
( )
I
D
(A)
N-Channel
20
0.025 @ V
GS
= 4.5 V
7.1
0.035 @ V
GS
= 2.5 V
6.0
P-Channel
–20
0.033 @ V
GS
= –4.5 V
6.2
0.050 @ V
GS
= –2.5 V
5.0
S
1
D
1
G
1
D
1
S
2
D
2
G
2
D
2
SO-8
5
6
7
8
Top View
2
3
4
1
N-Channel MOSFET
D
1
D
1
G
1
S
1
S
2
G
2
D
2
D
2
P-Channel MOSFET
Parameter
Symbol
N-Channel
P-Channel
Unit
Drain-Source Voltage
V
DS
20
–20
V
Gate-Source Voltage
V
GS
12
12
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
7.1
6.2
A
T
A
= 70 C
5.7
4.9
Pulsed Drain Current
I
DM
40
40
Continuous Source Current (Diode Conduction)
a
I
S
1.7
–1.7
Maximum Power Dissipation
a
T
A
= 25 C
P
D
2.0
2.0
W
T
A
= 70 C
1.3
1.3
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
Parameter
Symbol
N- or P-Channel
Unit
Maximum Junction-to-Ambient
a
R
thJA
62.5
C/W
Notes
a.
Surface Mounted on FR4 Board, t
10 sec.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Si4565DY | N- and P-Channel 40-V (D-S) MOSFET |
| SI4701DY | Load Switch with Level-Shift |
| SI4704DY | Load Switch with Level-Shift |
| SI4719CY | Battery Disconnect Switch |
| SI4720CY | Battery Disconnect Switch |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI4562DY | 制造商:Vishay Siliconix 功能描述:MOSFET DUAL NP SO-8 |
| SI4562DY_06 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N- and P-Channel 2.5-V (G-S) MOSFET |
| SI4562DY-E3 | 功能描述:MOSFET 20V 7.1/6.2A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4562DY-T1 | 功能描述:MOSFET 20V 7.1/6.2A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4562DY-T1-E3 | 功能描述:MOSFET 20V 7.1/6.2A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。