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參數(shù)資料
| 型號： | Si4565DY |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N- and P-Channel 40-V (D-S) MOSFET |
| 中文描述： | N和P溝道40 - V（下局副局長）MOSFET的 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 87K |
| 代理商： | SI4565DY |
FEATURES
TrenchFET Power MOSFET
100% R
g
Tested
UIS Tested
APPLICATIONS
CCFL Inverter
Si4565DY
Vishay Siliconix
New Product
Document Number: 73224
S-50033—Rev. A, 17-Jan-05
www.vishay.com
1
N- and P-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
Q
g
(Typ)
N-Channel
40
0.040 @ V
GS
= 10 V
5.2
8
0.045 @ V
GS
= 4.5 V
4.9
P Channel
P-Channel
0.054 @ V
GS
=
10 V
4.5
9
40
0.072 @ V
GS
=
4.5 V
3.9
S
1
D
1
G
1
D
1
S
2
D
2
G
2
D
2
SO-8
5
6
7
8
Top View
2
3
4
1
Ordering Information:
Si4565DY—E3
Si4565DY-T1—E3 (with Tape and Reel)
S
2
G
2
D
2
P-Channel MOSFET
N-Channel MOSFET
G
1
D
1
S
1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
N-Channel
P-Channel
Parameter
Symbol
10 secs
Steady State
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
V
GS
40
40
V
Gate-Source Voltage
12
16
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
T
A
= 70 C
I
D
5.2
4.2
3.9
3.1
4.5
3.6
3.3
2.7
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Avalanche Current
Single Pulse Avalanche Energy
I
DM
I
S
I
AS
E
AS
30
A
1.7
0.9
1.7
0.9
L = 0 1 mH
L = 0.1 mH
13
8.5
16
13
mJ
Maximum Power Dissipatio
a
T
A
= 25 C
T
A
= 70 C
P
D
2.0
1.3
1.1
0.7
2
1.1
0.7
W
1.3
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
THERMAL RESISTANCE RATINGS
N-Channel
P-Channel
Parameter
Symbol
Typ
Max
Typ
Max
Unit
Maximum Junction to Ambient
Maximum Junction-to-Ambient
a
t
10 sec
R
thJA
52
62.5
50
62.5
Steady State
90
110
85
110
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
32
40
30
40
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI4565DY-T1-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET N/P SO-8 |
| SI4567DY | 制造商:VAISH 制造商全稱:VAISH 功能描述:Dual N- and P-Channel 40-V (D-S) MOSFET |
| SI4567DY-T1-E3 | 功能描述:MOSFET N-AND P-CH 40V(D-S) RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4567DY-T1-GE3 | 功能描述:MOSFET 40V 5.0/4.4A 60/85mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4569DY | 制造商:VAISH 制造商全稱:VAISH 功能描述:N- and P-Channel 40-V (D-S) MOSFET |
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