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參數(shù)資料
| 型號： | SI4490DY |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 200-V (D-S) MOSFET |
| 中文描述： | N溝道200V（D-S）MOSFET |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 44K |
| 代理商： | SI4490DY |
Si4490DY
Vishay Siliconix
Document Number: 71341
S-03951—Rev. B, 26-May-03
www.vishay.com
1
N-Channel 200-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
200
0.080 @ V
GS
= 10 V
0.090 @ V
GS
= 6.0 V
4.0
3.8
SO-8
S
D
S
D
S
D
G
D
5
6
7
8
Top View
2
3
4
1
D
G
S
N-Channel MOSFET
Ordering Information:
Si4490DY
Si4490DY-T1 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
200
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
4.0
2.85
T
A
= 70 C
3.2
2.3
Pulsed Drain Current
I
DM
40
A
Avalanch Current
L = 0.1 mH
I
AS
15
Continuous Source Current (Diode Conduction)
a
I
S
2.6
1.3
Maximum Power Dissipation
a
T
A
= 25 C
P
D
3.1
1.56
W
T
A
= 70 C
2.0
1.0
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
33
40
Steady State
65
80
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
17
21
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Si4490DY-T1 | N-Channel 200-V (D-S) MOSFET |
| SI4500BDY | Complementary MOSFET Half-Bridge (N- and P-Channel) |
| SI4500BDY-T1 | Complementary MOSFET Half-Bridge (N- and P-Channel) |
| SI4500BDY-T1-E3 | Complementary MOSFET Half-Bridge (N- and P-Channel) |
| SI4500DY | Complementary MOSFET Half-Bridge (N- and P-Channel) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI4490DY_06 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 200-V (D-S) MOSFET |
| SI4490DY_13 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 200-V (D-S) MOSFET |
| SI4490DY-E3 | 功能描述:MOSFET 200V 4A 3.1W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4490DY-T1 | 功能描述:MOSFET 200V 4A 3.1W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4490DY-T1-E3 | 功能描述:MOSFET 200V 4A 3.1W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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