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參數(shù)資料
| 型號： | Si4473DY-T1-E3 |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | P-Channel 14-V (D-S) MOSFET |
| 中文描述： | P通道14 - V（下局副局長）MOSFET的 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 56K |
| 代理商： | SI4473DY-T1-E3 |
FEATURES
TrenchFET Power MOSFET
APPLICATION
Battery Switch for Portable Equipment
Si4473DY
Vishay Siliconix
Document Number: 71613
S-50154—Rev. C, 31-Jan-05
www.vishay.com
1
P-Channel 14-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
14
0.011 @ V
GS
=
4.5 V
13
0.016 @ V
GS
=
2.5 V
11
S
D
S
D
S
D
G
D
SO-8
5
6
7
8
Top View
2
3
4
1
Ordering Information:
Si4473DY
Si4473DY-T1 (with Tape and Reel)
Si4473DY—E3 (Lead (Pb)-Free)
Si4473DY-T1—E3 (Lead (Pb)-Free with Tape and Reel)
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
14
V
Gate-Source Voltage
V
GS
12
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
13
9
T
A
= 70 C
10
7
A
Pulsed Drain Current
I
DM
50
continuous Source Current (Diode Conduction)
a
I
S
2.7
1.36
Maximum Power Dissipation
a
T
A
= 25 C
P
D
3.0
1.5
W
T
A
= 70 C
1.9
0.95
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
33
42
Steady State
70
84
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
16
21
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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|---|---|
| SI4473BDY | P-Channel 14-V (D-S) MOSFET |
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| SI4482DY | 30V N-Channel PowerTrench MOSFET |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SI4477DY | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 20 V (D-S) MOSFET |
| SI4477DY-T1-GE3 | 功能描述:MOSFET 30V 6.2mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4477DY-T1-GE3 | 制造商:Vishay Siliconix 功能描述:P CHANNEL MOSFET -20V 26.6A 制造商:Vishay Siliconix 功能描述:P CHANNEL MOSFET, -20V, 26.6A |
| SI4480DY | 功能描述:MOSFET SO8 NCH 80V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4480DY-E3 | 功能描述:MOSFET 80V 6A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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