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參數(shù)資料
| 型號： | SI4411DY |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel 30-V (D-S) MOSFE |
| 中文描述： | P溝道30 V的（副）MOSFE |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 41K |
| 代理商： | SI4411DY |
FEATURES
TrenchFET Power MOSFET
APPLICATIONS
Notebook
- Load Switch
- Battery Switch
Si4411DY
Vishay Siliconix
New Product
Document Number: 72149
S-03539—Rev. B, 24-Mar-03
www.vishay.com
1
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
-30
0.010 @ V
GS
= -10 V
-13
0.0155 @ V
GS
= -4.5 V
-10
S
D
S
D
S
D
G
D
SO-8
5
6
7
8
Top View
2
3
4
1
S
G
D
P-Channel MOSFET
Ordering Information: Si4411DY
Si4411DY-T1 (with tape and reel)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
-30
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
-13
-9
T
A
= 70 C
-10.5
-7.5
A
Pulsed Drain Current
I
DM
-50
continuous Source Current (Diode Conduction)
a
I
S
-2.7
-1.36
Maximum Power Dissipation
a
T
A
= 25 C
P
D
3.0
1.5
W
T
A
= 70 C
1.9
0.95
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
33
42
Steady State
70
85
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
16
21
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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|---|---|
| SI4411DY-T1 | P-Channel 30-V (D-S) MOSFE |
| Si4418DY-E3 | N-Channel 200-V (D-S) MOSFET |
| Si4418DY-T1-E3 | N-Channel 200-V (D-S) MOSFET |
| SI4418DY | N-Channel 200-V (D-S) MOSFET |
| SI4425BDY | P-Channel 30-V (D-S) MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI4411DY-T1 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 30-V (D-S) MOSFE |
| SI4411DY-T1-E3 | 功能描述:MOSFET 30V 13A 3.0W 10mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4411DY-T1-GE3 | 功能描述:MOSFET 30V 13A 3.0W 10mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4412ADY | 功能描述:MOSFET 30V 8A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4412ADY-E3 | 功能描述:MOSFET 30V 8A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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