參數(shù)資料
型號(hào)： Si4378DY-E3
廠商： Vishay Intertechnology,Inc.
英文描述： N-Channel 20-V (D-S) MOSFET
中文描述： N溝道20 - V（下局副局長(zhǎng)）MOSFET的
文件頁(yè)數(shù)： 1/5頁(yè)
文件大?。?/td> 55K
代理商： SI4378DY-E3
FEATURES
Ultra Low On-Resistance Using High Density
TrenchFET Gen II Power MOSFET Technology
Q
g
Optimized
100% R
g
Tested
APPLICATIONS
Synchronous Rectification
Point-Of-Load
Si4378DY
Vishay Siliconix
New Product
Document Number: 72918
S-40854—Rev. A, 03-May-04
www.vishay.com
1
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
20
0.0027 @ V
GS
= 4.5 V
0.0042 @ V
GS
= 2.5 V
25
22
SO-8
S
D
S
D
S
D
G
D
5
6
7
8
Top View
2
3
4
1
D
G
S
N-Channel MOSFET
Ordering Information:
Si4378DY—E3
Si4378DY-T1—E3 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
20
V
Gate-Source Voltage
V
GS
12
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
25
19
T
A
= 70 C
20
13
Pulsed Drain Current (10 s Pulse Width)
I
DM
70
A
Continuous Source Current (Diode Conduction)
a
I
S
2.9
1.3
Avalanche Current
L = 0.1 mH
I
AS
40
Maximum Power Dissipation
a
T
A
= 25 C
P
D
3.5
1.6
W
T
A
= 70 C
2.2
1
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
29
35
Steady State
67
80
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
13
16
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
相關(guān)PDF資料
PDF描述
Si4378DY-T1-E3 N-Channel 20-V (D-S) MOSFET
SI4392DY-E3 N-Channel Reduced Qg, Fast Switching WFET
SI4392DY-T1 N-Channel Reduced Qg, Fast Switching WFET
SI4392DY-T1-E3 N-Channel Reduced Qg, Fast Switching WFET
SI4392DY N-Ch. Reduced Qg, Fast Switching WFET; Extr.Low Switching Loss
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI4378DY-T1-E3 功能描述:MOSFET 20V 25A 3.5W 2.7mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4378DY-T1-GE3 功能描述:MOSFET 20V 25A 3.5W 2.7mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4382DY-T1-E3 功能描述:MOSFET 30V 4.7mohm@10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4382DY-T1-GE3 功能描述:MOSFET 30V 4.7mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4384DY-T1-E3 功能描述:MOSFET 30V 15A 1.47W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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